JPS5588426A - Semiconductor switch circuit - Google Patents

Semiconductor switch circuit

Info

Publication number
JPS5588426A
JPS5588426A JP12394279A JP12394279A JPS5588426A JP S5588426 A JPS5588426 A JP S5588426A JP 12394279 A JP12394279 A JP 12394279A JP 12394279 A JP12394279 A JP 12394279A JP S5588426 A JPS5588426 A JP S5588426A
Authority
JP
Japan
Prior art keywords
resistance state
transistor
thyristor
high resistance
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12394279A
Other languages
Japanese (ja)
Other versions
JPS60819B2 (en
Inventor
Yoshitaka Kanbara
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP54123942A priority Critical patent/JPS60819B2/en
Publication of JPS5588426A publication Critical patent/JPS5588426A/en
Publication of JPS60819B2 publication Critical patent/JPS60819B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region

Landscapes

  • Electronic Switches (AREA)
  • Thyristor Switches And Gates (AREA)
  • Power Conversion In General (AREA)

Abstract

PURPOSE:To increase both the dV/dt limit value and the gate sensitivity as well as to decrease the malfunction by securing the quick transfer for the variable resistance element provided to the photo thyristor to the high resistance state via the light variable resistance element which is controlled by the light ignition signal. CONSTITUTION:With application of the sudden voltage to anode terminal A of photo thyristor 11, the capacitor comprising the nB-pC region flows the charge current to transfer transistor 2 from the high resistance state to the low resistance state. And thus the short-circuit is secured between the gate and cathode terminals of thyristor 11 to prevent the erroneous ignition. In case the ignition signal is applied in the state under which transistor 2 is not reset to the high resistance state yet, transistor 5 is transferred to the low resistance state via part of the gate ignition signal sent from light emitting diode 8. Thus the residual carrier at the base region of transistor 2 is discharged to cathode terminal K of thyristor 11 to secure the quick reset to the high resistance state.
JP54123942A 1979-09-28 1979-09-28 semiconductor switch circuit Expired JPS60819B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54123942A JPS60819B2 (en) 1979-09-28 1979-09-28 semiconductor switch circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54123942A JPS60819B2 (en) 1979-09-28 1979-09-28 semiconductor switch circuit

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6350176A Division JPS52147081A (en) 1976-06-02 1976-06-02 Semiconductor switching circuit

Publications (2)

Publication Number Publication Date
JPS5588426A true JPS5588426A (en) 1980-07-04
JPS60819B2 JPS60819B2 (en) 1985-01-10

Family

ID=14873158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54123942A Expired JPS60819B2 (en) 1979-09-28 1979-09-28 semiconductor switch circuit

Country Status (1)

Country Link
JP (1) JPS60819B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138431U (en) * 1981-02-20 1982-08-30
JPS57138432U (en) * 1981-02-20 1982-08-30
US5017991A (en) * 1984-03-22 1991-05-21 Jun-Ichi Nishizawa Light quenchable thyristor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57138431U (en) * 1981-02-20 1982-08-30
JPS57138432U (en) * 1981-02-20 1982-08-30
US5017991A (en) * 1984-03-22 1991-05-21 Jun-Ichi Nishizawa Light quenchable thyristor device

Also Published As

Publication number Publication date
JPS60819B2 (en) 1985-01-10

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