JPS5793728A - Semiconductor switch - Google Patents

Semiconductor switch

Info

Publication number
JPS5793728A
JPS5793728A JP17006480A JP17006480A JPS5793728A JP S5793728 A JPS5793728 A JP S5793728A JP 17006480 A JP17006480 A JP 17006480A JP 17006480 A JP17006480 A JP 17006480A JP S5793728 A JPS5793728 A JP S5793728A
Authority
JP
Japan
Prior art keywords
thyristor
short
gate
voltage
leading edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17006480A
Other languages
Japanese (ja)
Inventor
Kanji Mukai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP17006480A priority Critical patent/JPS5793728A/en
Publication of JPS5793728A publication Critical patent/JPS5793728A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To prevent malfunction due to voltage with steep leading edge applied across a switch, by short-circuiting a PN junction of a thyristor at two parts of P and N gates of the thyristor. CONSTITUTION:When a voltage with steep leading edge is applied to an anode terminal 11, a current flows through an emitter-base junction of a transistor(TR) 7 and a capacitor 8. This current flows to the base of a TR9 to short-circuit a P gate and a cathode of a thyristor 10 and at the same time short-circuite an N gate and an anode of the thyristor 10 by the TR7.
JP17006480A 1980-12-02 1980-12-02 Semiconductor switch Pending JPS5793728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17006480A JPS5793728A (en) 1980-12-02 1980-12-02 Semiconductor switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17006480A JPS5793728A (en) 1980-12-02 1980-12-02 Semiconductor switch

Publications (1)

Publication Number Publication Date
JPS5793728A true JPS5793728A (en) 1982-06-10

Family

ID=15897953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17006480A Pending JPS5793728A (en) 1980-12-02 1980-12-02 Semiconductor switch

Country Status (1)

Country Link
JP (1) JPS5793728A (en)

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