JPS561767A - Gate circuit for thyristor - Google Patents
Gate circuit for thyristorInfo
- Publication number
- JPS561767A JPS561767A JP7532079A JP7532079A JPS561767A JP S561767 A JPS561767 A JP S561767A JP 7532079 A JP7532079 A JP 7532079A JP 7532079 A JP7532079 A JP 7532079A JP S561767 A JPS561767 A JP S561767A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- transistor
- thyristor
- potential
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Voltage And Current In General (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
PURPOSE:To ensure the supply of constant gate current irrelevant to the gate impedance by the feedback circuit employing the transistor provided on the gate circuit. CONSTITUTION:With the application of the pulse to the pulse power source, the transistor (Tr) turns on to allow the gate current to be fed to the thyristor. When the gate impedance of the thyristor 2 is low, the gate potential lowers and the base potential and the emitter potential of the transistor Tr9 drop. This lowers the base potential of the transistor Tr8 and reduces the collector current of the transistor Tr8 thereby checking the gate current from increasing. When the gate impedance of the thyristor 2, the base potential and the emitter potential of the transistor Tr9 rises and the base potential of the transistor Tr8 increases thereby checking the gate current from decreasing. Thus, the constant gate current can be always supplied irrelevant to the gate impedance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7532079A JPS561767A (en) | 1979-06-14 | 1979-06-14 | Gate circuit for thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7532079A JPS561767A (en) | 1979-06-14 | 1979-06-14 | Gate circuit for thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS561767A true JPS561767A (en) | 1981-01-09 |
Family
ID=13572843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7532079A Pending JPS561767A (en) | 1979-06-14 | 1979-06-14 | Gate circuit for thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561767A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115870A (en) * | 1981-11-09 | 1982-07-19 | Semiconductor Energy Lab Co Ltd | Insulated gate type field effect semiconductor device |
| JPS57115869A (en) * | 1981-11-09 | 1982-07-19 | Semiconductor Energy Lab Co Ltd | Insulated gate type semiconductor device and manufacture thereof |
| JPS58209162A (en) * | 1982-05-10 | 1983-12-06 | テキサス・インスツルメンツ・インコ−ポレイテツド | Switch circuit |
| US4856574A (en) * | 1986-12-29 | 1989-08-15 | Sharp Kabushiki Kaisha | Electric blind apparatus |
-
1979
- 1979-06-14 JP JP7532079A patent/JPS561767A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57115870A (en) * | 1981-11-09 | 1982-07-19 | Semiconductor Energy Lab Co Ltd | Insulated gate type field effect semiconductor device |
| JPS57115869A (en) * | 1981-11-09 | 1982-07-19 | Semiconductor Energy Lab Co Ltd | Insulated gate type semiconductor device and manufacture thereof |
| JP2593641B2 (en) * | 1981-11-09 | 1997-03-26 | 株式会社 半導体エネルギー研究所 | Insulated gate field effect semiconductor device |
| JP2593640B2 (en) * | 1981-11-09 | 1997-03-26 | 株式会社 半導体エネルギー研究所 | Insulated gate field effect semiconductor device |
| JPS58209162A (en) * | 1982-05-10 | 1983-12-06 | テキサス・インスツルメンツ・インコ−ポレイテツド | Switch circuit |
| US4856574A (en) * | 1986-12-29 | 1989-08-15 | Sharp Kabushiki Kaisha | Electric blind apparatus |
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