JPS5646337A - Semiconductor switch - Google Patents

Semiconductor switch

Info

Publication number
JPS5646337A
JPS5646337A JP12086179A JP12086179A JPS5646337A JP S5646337 A JPS5646337 A JP S5646337A JP 12086179 A JP12086179 A JP 12086179A JP 12086179 A JP12086179 A JP 12086179A JP S5646337 A JPS5646337 A JP S5646337A
Authority
JP
Japan
Prior art keywords
switch
anode
base
emitter
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12086179A
Other languages
Japanese (ja)
Other versions
JPS6040739B2 (en
Inventor
Shinji Okuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12086179A priority Critical patent/JPS6040739B2/en
Priority to DE8080105547T priority patent/DE3071552D1/en
Priority to EP80105547A priority patent/EP0027888B1/en
Priority to CA000360656A priority patent/CA1149885A/en
Priority to US06/188,745 priority patent/US4365170A/en
Priority to AU62588/80A priority patent/AU526957B2/en
Publication of JPS5646337A publication Critical patent/JPS5646337A/en
Publication of JPS6040739B2 publication Critical patent/JPS6040739B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To enable to increase the capability by dV/dt of PNPN element, by connecting a diode between the base of a transistor the emitter of which is connected to one main terminal of the PNPN element and the layer adjacent to the main terminal. CONSTITUTION:The collector and the emitter of Tr12 are connected between the gate G and the cathode K of the PNPN switch 11, the emitter of the transistor Tr16 is connected to the anode of the switch 11 and the collector of Tr16 is connected to the base of Tr12. Further, a diode 17 is connected between the base of Tr16 and the layer adjacent to the anode A of the switch 11. With a DC voltage fed between the anode and the cathode of the switch 11, when the switch 11 is triggered by supplying a current to the gate G, the electric charge stored on the base of Tr16 flows to the anode gate of the switch 11 via the diode 17 to obtain the protection of dV/dt against the rise in the forward voltage applied next.
JP12086179A 1979-09-21 1979-09-21 semiconductor switch Expired JPS6040739B2 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP12086179A JPS6040739B2 (en) 1979-09-21 1979-09-21 semiconductor switch
DE8080105547T DE3071552D1 (en) 1979-09-21 1980-09-16 Semiconductor switch
EP80105547A EP0027888B1 (en) 1979-09-21 1980-09-16 Semiconductor switch
CA000360656A CA1149885A (en) 1979-09-21 1980-09-19 Semiconductor switch
US06/188,745 US4365170A (en) 1979-09-21 1980-09-19 Semiconductor switch
AU62588/80A AU526957B2 (en) 1979-09-21 1980-09-22 Pnpn switch

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12086179A JPS6040739B2 (en) 1979-09-21 1979-09-21 semiconductor switch

Publications (2)

Publication Number Publication Date
JPS5646337A true JPS5646337A (en) 1981-04-27
JPS6040739B2 JPS6040739B2 (en) 1985-09-12

Family

ID=14796759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12086179A Expired JPS6040739B2 (en) 1979-09-21 1979-09-21 semiconductor switch

Country Status (1)

Country Link
JP (1) JPS6040739B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605625A (en) * 1983-06-24 1985-01-12 Oki Electric Ind Co Ltd Electronic switching circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0420558U (en) * 1990-06-13 1992-02-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605625A (en) * 1983-06-24 1985-01-12 Oki Electric Ind Co Ltd Electronic switching circuit

Also Published As

Publication number Publication date
JPS6040739B2 (en) 1985-09-12

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