JPS5664462A - Lateral triac - Google Patents
Lateral triacInfo
- Publication number
- JPS5664462A JPS5664462A JP13959579A JP13959579A JPS5664462A JP S5664462 A JPS5664462 A JP S5664462A JP 13959579 A JP13959579 A JP 13959579A JP 13959579 A JP13959579 A JP 13959579A JP S5664462 A JPS5664462 A JP S5664462A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- triac
- lateral
- antiparallel
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002457 bidirectional effect Effects 0.000 abstract 1
- 239000008188 pellet Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To increase the Cdv/dt withstand voltage of a lateral triac by connecting two lateral thyristors in antiparallel in which a current flows on the surface of the pellet as a bidirectional energization triac and specifying the anode and cathode connecting dispositions in the triac. CONSTITUTION:When forming two lateral thyristors in antiparallel on one N type semiconductor substrate 9, the P type anode layers 1, 10 are formed in proximity. Further, N type emitter layers 3, 12 are formed respectively at both sides of the P type base layers 2 and 11, and are used as cathode layers. Subsequently, the layers 1, 11 and 2, 10 are connected in antiparallel on the surface wire. That is, one anode is connected to the cathodes located at far distance terefrom. Thus, the current paths of the two thyristors are specified as designated by 18, 19, thereby eliminating common part so as to thus increase the withstand voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13959579A JPS5664462A (en) | 1979-10-29 | 1979-10-29 | Lateral triac |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13959579A JPS5664462A (en) | 1979-10-29 | 1979-10-29 | Lateral triac |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5664462A true JPS5664462A (en) | 1981-06-01 |
Family
ID=15248919
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13959579A Pending JPS5664462A (en) | 1979-10-29 | 1979-10-29 | Lateral triac |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5664462A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0090169A2 (en) * | 1982-02-23 | 1983-10-05 | Siemens Aktiengesellschaft | Triac controlled by field effect |
-
1979
- 1979-10-29 JP JP13959579A patent/JPS5664462A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0090169A2 (en) * | 1982-02-23 | 1983-10-05 | Siemens Aktiengesellschaft | Triac controlled by field effect |
EP0090169A3 (en) * | 1982-02-23 | 1986-03-12 | Siemens Aktiengesellschaft | Triac controlled by field effect |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB935710A (en) | Improvements in controlled semiconductor rectifiers | |
JPS57117276A (en) | Semiconductor device | |
JPS5664462A (en) | Lateral triac | |
JPS5312281A (en) | Semiconductor control rectifying element | |
JPS5718360A (en) | Gate controlling semiconductor element | |
JPS57138175A (en) | Controlled rectifier for semiconductor | |
JPS57188875A (en) | Gate turn off thyristor | |
US4231054A (en) | Thyristor with starting and generating cathode base contacts for use in rectifier circuits | |
US3504241A (en) | Semiconductor bidirectional switch | |
FR2428918A1 (en) | Switching transistor with reduced current in conducting mode - uses two surfaces on substrate for twin emitter short circuiting one (NL 18.12.79) | |
JPS57157571A (en) | Gto thyristor of amplification type gate structure | |
US4298880A (en) | Power thyristor and method of fabrication therefore utilizing control, generating, and firing gates | |
JPS5771178A (en) | Semiconductor device | |
JPS5784175A (en) | Semiconductor device | |
JPS5646337A (en) | Semiconductor switch | |
JPS5515202A (en) | Semiconductor controlling rectifier | |
GB1477513A (en) | Unidirectional thyristors | |
JPS5263687A (en) | Semiconductor device | |
JPS5559769A (en) | Switching transistor | |
JPS5645073A (en) | Reverse conduction thyrister | |
JPS5660057A (en) | Semiconductor device | |
GB1495447A (en) | Semi-conductor switching device | |
JPS5683058A (en) | Field programmable semiconductor integrated circuit device | |
JPS5499579A (en) | Two terminals reverse conducting thyristor | |
JPS5627967A (en) | Thyristor |