JPS5660057A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5660057A JPS5660057A JP13614879A JP13614879A JPS5660057A JP S5660057 A JPS5660057 A JP S5660057A JP 13614879 A JP13614879 A JP 13614879A JP 13614879 A JP13614879 A JP 13614879A JP S5660057 A JPS5660057 A JP S5660057A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- base
- emitter
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000003321 amplification Effects 0.000 abstract 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To improve the current amplification factor of the semiconductor device by forming an N type layer on a part of a P type layer and forming a P type layer on a part thereof, thereby reducing a resistance between the emitter and the base of a transistor where a reverse conducting diode is built-in. CONSTITUTION:A transistor is formed on an N type collector layer 2, a P type base layer 3 and an N type emitter layer 4. An N type base layer 5 having slightly higher density than the layer 3 is formed on a part of the layer 3, and a P type emitter layer 6 having higher density than the layer 5 is formed on the layer 5. Electrodes 8 and 10 are connected by an external lead wire 12, the layers 3 and 5 are shorted by electrodes 9, 14, and the electrode 9 is connected to the base electrode 7. Further, the junction J3 between the layers 6 and 5 is connected as a reverse diode between the base and the emitter so that, when the base is biased forwardly, the diode may not be reversely biased to eliminate a reactive current flow.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13614879A JPS5660057A (en) | 1979-10-22 | 1979-10-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13614879A JPS5660057A (en) | 1979-10-22 | 1979-10-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5660057A true JPS5660057A (en) | 1981-05-23 |
Family
ID=15168422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13614879A Pending JPS5660057A (en) | 1979-10-22 | 1979-10-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5660057A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992559A (en) * | 1982-10-20 | 1984-05-28 | ロ−ベルト・ボツシユ・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Monolithic integrated circuit device |
-
1979
- 1979-10-22 JP JP13614879A patent/JPS5660057A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5992559A (en) * | 1982-10-20 | 1984-05-28 | ロ−ベルト・ボツシユ・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Monolithic integrated circuit device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54140875A (en) | Semiconductor device | |
| JPS5660057A (en) | Semiconductor device | |
| JPS5734363A (en) | Semiconductor device | |
| JPS5734360A (en) | Semiconductor device | |
| JPS5593262A (en) | Semiconductor device | |
| JPS5561063A (en) | Schottky barrier diode built-in transistor | |
| JPS56148864A (en) | Thyristor | |
| JPS57206072A (en) | Semiconductor device | |
| JPS5559769A (en) | Switching transistor | |
| JPS5727052A (en) | Semiconductor device | |
| JPS57208170A (en) | Composite transistor | |
| JPS5261976A (en) | Semiconductor integrated circuit device and its production | |
| JPS5599759A (en) | Semiconductor integrated circuit device | |
| JPS5621357A (en) | Integrated circuit device | |
| JPS5715466A (en) | Semiconductor device | |
| JPS5655068A (en) | Thyristor | |
| JPS57157571A (en) | Gto thyristor of amplification type gate structure | |
| JPS57113276A (en) | Semiconductor memory device | |
| JPS56126959A (en) | Semiconductor device | |
| JPS57124470A (en) | Semiconductor device | |
| JPS55154760A (en) | Semiconductor device | |
| JPS5587476A (en) | Semiconductor device | |
| JPS5556658A (en) | Thyristor | |
| JPS5739573A (en) | Semiconductor device | |
| JPS554975A (en) | Semiconductor device for power application and manufacturing method |