JPS5556658A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5556658A
JPS5556658A JP13021778A JP13021778A JPS5556658A JP S5556658 A JPS5556658 A JP S5556658A JP 13021778 A JP13021778 A JP 13021778A JP 13021778 A JP13021778 A JP 13021778A JP S5556658 A JPS5556658 A JP S5556658A
Authority
JP
Japan
Prior art keywords
layer
rgk
registor
effect
withstanding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13021778A
Other languages
Japanese (ja)
Other versions
JPS6143862B2 (en
Inventor
Satoru Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13021778A priority Critical patent/JPS5556658A/en
Publication of JPS5556658A publication Critical patent/JPS5556658A/en
Publication of JPS6143862B2 publication Critical patent/JPS6143862B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain high rate-effect withstanding quantity in a 4-layer structuture comprising p2, n2, p3, and n4 by constituting a p-layer for manufacturing a registor RGK between a gate and cathode on an n2-base layer outside the p3-layer. CONSTITUTION:Being different from the prior art, s short-circuit resistor is not provided in an n4-emitter layer, and a p5-layer 4 for a registor RGK is extended from a p3-layer and provided on an n2-base layer. The resistance value of the p5-layer 4 can be adjusted simply and accurately by the combination of width and length. Therefore, the SCR whose rate-effect withstanding quantity is high can be obtained.
JP13021778A 1978-10-23 1978-10-23 Thyristor Granted JPS5556658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13021778A JPS5556658A (en) 1978-10-23 1978-10-23 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13021778A JPS5556658A (en) 1978-10-23 1978-10-23 Thyristor

Publications (2)

Publication Number Publication Date
JPS5556658A true JPS5556658A (en) 1980-04-25
JPS6143862B2 JPS6143862B2 (en) 1986-09-30

Family

ID=15028881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13021778A Granted JPS5556658A (en) 1978-10-23 1978-10-23 Thyristor

Country Status (1)

Country Link
JP (1) JPS5556658A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969970A (en) * 1982-10-15 1984-04-20 Nec Home Electronics Ltd Semiconductor device
JPS62169366A (en) * 1986-01-21 1987-07-25 Nec Corp Small current thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969970A (en) * 1982-10-15 1984-04-20 Nec Home Electronics Ltd Semiconductor device
JPS62169366A (en) * 1986-01-21 1987-07-25 Nec Corp Small current thyristor

Also Published As

Publication number Publication date
JPS6143862B2 (en) 1986-09-30

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