JPS5669862A - Triac and its manufacture - Google Patents

Triac and its manufacture

Info

Publication number
JPS5669862A
JPS5669862A JP14826779A JP14826779A JPS5669862A JP S5669862 A JPS5669862 A JP S5669862A JP 14826779 A JP14826779 A JP 14826779A JP 14826779 A JP14826779 A JP 14826779A JP S5669862 A JPS5669862 A JP S5669862A
Authority
JP
Japan
Prior art keywords
layer
gate
currents
under
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14826779A
Other languages
Japanese (ja)
Other versions
JPS6043670B2 (en
Inventor
Kaname Otaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14826779A priority Critical patent/JPS6043670B2/en
Publication of JPS5669862A publication Critical patent/JPS5669862A/en
Publication of JPS6043670B2 publication Critical patent/JPS6043670B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To eliminate the unevenness of gate-trigger currents by a simple structure by forming the fifth n layer of which the fourth n layer is extended under a gate electrode. CONSTITUTION:A p2 layer between an n2 layer 4 and an n4 layer 6 is surrounded, the n4 layer is extended so as to contact with an end section of a gate electrode 7, and the fifth n layer (n5) 10 is formed. Thus, gate currents A flowing through the p2 layer just under the n2 layer are utilized for the ignition of an SCR of p1-n1-p2-n5. According to this constitution, gate-trigger currents in the case when gate electrode potential is negative and the second main electrode potential is positive can be reduced as compared to the case when only gate currents flowing through the p2 layer just under the n4 layer contribute to the ignition of the first SCR as seen in conventional triacs. Trigger currents are also uniformalized.
JP14826779A 1979-11-12 1979-11-12 Triax and its manufacturing method Expired JPS6043670B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14826779A JPS6043670B2 (en) 1979-11-12 1979-11-12 Triax and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14826779A JPS6043670B2 (en) 1979-11-12 1979-11-12 Triax and its manufacturing method

Publications (2)

Publication Number Publication Date
JPS5669862A true JPS5669862A (en) 1981-06-11
JPS6043670B2 JPS6043670B2 (en) 1985-09-30

Family

ID=15448941

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14826779A Expired JPS6043670B2 (en) 1979-11-12 1979-11-12 Triax and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS6043670B2 (en)

Also Published As

Publication number Publication date
JPS6043670B2 (en) 1985-09-30

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