JPS5669862A - Triac and its manufacture - Google Patents
Triac and its manufactureInfo
- Publication number
- JPS5669862A JPS5669862A JP14826779A JP14826779A JPS5669862A JP S5669862 A JPS5669862 A JP S5669862A JP 14826779 A JP14826779 A JP 14826779A JP 14826779 A JP14826779 A JP 14826779A JP S5669862 A JPS5669862 A JP S5669862A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- currents
- under
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To eliminate the unevenness of gate-trigger currents by a simple structure by forming the fifth n layer of which the fourth n layer is extended under a gate electrode. CONSTITUTION:A p2 layer between an n2 layer 4 and an n4 layer 6 is surrounded, the n4 layer is extended so as to contact with an end section of a gate electrode 7, and the fifth n layer (n5) 10 is formed. Thus, gate currents A flowing through the p2 layer just under the n2 layer are utilized for the ignition of an SCR of p1-n1-p2-n5. According to this constitution, gate-trigger currents in the case when gate electrode potential is negative and the second main electrode potential is positive can be reduced as compared to the case when only gate currents flowing through the p2 layer just under the n4 layer contribute to the ignition of the first SCR as seen in conventional triacs. Trigger currents are also uniformalized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14826779A JPS6043670B2 (en) | 1979-11-12 | 1979-11-12 | Triax and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14826779A JPS6043670B2 (en) | 1979-11-12 | 1979-11-12 | Triax and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5669862A true JPS5669862A (en) | 1981-06-11 |
JPS6043670B2 JPS6043670B2 (en) | 1985-09-30 |
Family
ID=15448941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14826779A Expired JPS6043670B2 (en) | 1979-11-12 | 1979-11-12 | Triax and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6043670B2 (en) |
-
1979
- 1979-11-12 JP JP14826779A patent/JPS6043670B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6043670B2 (en) | 1985-09-30 |
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