JPS5562767A - Triac - Google Patents
TriacInfo
- Publication number
- JPS5562767A JPS5562767A JP13539778A JP13539778A JPS5562767A JP S5562767 A JPS5562767 A JP S5562767A JP 13539778 A JP13539778 A JP 13539778A JP 13539778 A JP13539778 A JP 13539778A JP S5562767 A JPS5562767 A JP S5562767A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- scr region
- gate
- scr
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To decrease gate trigger currents, by stretching an emitter layer of the first SCR region onto a surface of a p emitter layer of the second SCR region so as to contact with an end portion of an electrode while surrounding a n-layer of the first SCR region. CONSTITUTION:An electrode 8 is made to be positive, an electrode 9 to be negative and a gate electrode 7 to be positive to the electrode 8. Gate currents flow through the electrode 8 through a P2-layer 3 from the electrode 7 at that time, and electrons are injected to the P2-layer 3 from a n2-layer 4 of a SCR region I and a n5-layer 10 of a SCR region II. Since the n5-layer 10 is formed so as to contact with an end portion of the electrode 8, the gate currents pass through the p2-layer 3 just under the n5-layer 10, thus efficiently injecting electrons. Since the n5-layer 10 is mounted at a portion, which opposes to a n3 emitter layer 5 of the SCR II, on a surface of the p2-layer 3, the electrons injected to the layer 3 from the layer 10 can efficiently contribute to the ignition of the SCR region II. Thus, gate trigger currents in this mode can be reduced as compared to conventional devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13539778A JPS5562767A (en) | 1978-11-01 | 1978-11-01 | Triac |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13539778A JPS5562767A (en) | 1978-11-01 | 1978-11-01 | Triac |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5562767A true JPS5562767A (en) | 1980-05-12 |
Family
ID=15150750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13539778A Pending JPS5562767A (en) | 1978-11-01 | 1978-11-01 | Triac |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5562767A (en) |
-
1978
- 1978-11-01 JP JP13539778A patent/JPS5562767A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Effective date: 20040220 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A621 | Written request for application examination |
Effective date: 20040220 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061010 |
|
| A313 | Final decision of rejection without a dissenting response from the applicant |
Effective date: 20070302 Free format text: JAPANESE INTERMEDIATE CODE: A313 |
|
| A02 | Decision of refusal |
Effective date: 20070403 Free format text: JAPANESE INTERMEDIATE CODE: A02 |