JPS54141582A - Reverse conducting thyristor - Google Patents

Reverse conducting thyristor

Info

Publication number
JPS54141582A
JPS54141582A JP5035278A JP5035278A JPS54141582A JP S54141582 A JPS54141582 A JP S54141582A JP 5035278 A JP5035278 A JP 5035278A JP 5035278 A JP5035278 A JP 5035278A JP S54141582 A JPS54141582 A JP S54141582A
Authority
JP
Japan
Prior art keywords
layer
groove
commutation
firing current
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5035278A
Other languages
Japanese (ja)
Inventor
Kozo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5035278A priority Critical patent/JPS54141582A/en
Publication of JPS54141582A publication Critical patent/JPS54141582A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
    • H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To reduce gate firing current and achieve the improvement of commutation characteristics by cutting off the side line where a part of the gate firing current of the SCR part passes the diode part. CONSTITUTION:A mesa groove 9 deeper than the junction of a P layer 2 and an N layer 1 is created in the intermediate region III of the PB layer 2a of an SCR part I and the P layer 2b of a diode part II. The inside of the groove is insulstion-covered 10. This groove isolates the electrode 5a making contact to the surface of the NE layer 4 and a part of the PB layer 2a and the electrode 5a on the P layer 2b. The electrodes 5a, 5b are connected on the outside. The firing current IGT from the gate 7 is only the effective component IGTO and the small sideline current IGTS' flowing the PB layer 2a of the shortcircuit emitter part, thus the large effective component IGTO may be obtained with the small IGT. The carrier accumulated in the N layer 1b at the commutation owing to the presence of the region III is prevented from flowing into the NB layer 1a, whereby the commutation characteristics are improved.
JP5035278A 1978-04-26 1978-04-26 Reverse conducting thyristor Pending JPS54141582A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5035278A JPS54141582A (en) 1978-04-26 1978-04-26 Reverse conducting thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5035278A JPS54141582A (en) 1978-04-26 1978-04-26 Reverse conducting thyristor

Publications (1)

Publication Number Publication Date
JPS54141582A true JPS54141582A (en) 1979-11-02

Family

ID=12856504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5035278A Pending JPS54141582A (en) 1978-04-26 1978-04-26 Reverse conducting thyristor

Country Status (1)

Country Link
JP (1) JPS54141582A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135559A (en) * 1984-07-27 1986-02-20 Meidensha Electric Mfg Co Ltd Reverse conducting type gate turn-off thyristor
JPS6224671A (en) * 1985-07-25 1987-02-02 Meidensha Electric Mfg Co Ltd Complex element structure of thyristor
JPS62133761A (en) * 1985-12-06 1987-06-16 Internatl Rectifier Corp Japan Ltd Semiconductor device and manufacture thereof
US4742382A (en) * 1985-03-20 1988-05-03 Bbc Brown, Boveri & Company, Limited Semiconductor component

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6135559A (en) * 1984-07-27 1986-02-20 Meidensha Electric Mfg Co Ltd Reverse conducting type gate turn-off thyristor
US4742382A (en) * 1985-03-20 1988-05-03 Bbc Brown, Boveri & Company, Limited Semiconductor component
JPS6224671A (en) * 1985-07-25 1987-02-02 Meidensha Electric Mfg Co Ltd Complex element structure of thyristor
JPS62133761A (en) * 1985-12-06 1987-06-16 Internatl Rectifier Corp Japan Ltd Semiconductor device and manufacture thereof

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