JPS5737884A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5737884A
JPS5737884A JP11387280A JP11387280A JPS5737884A JP S5737884 A JPS5737884 A JP S5737884A JP 11387280 A JP11387280 A JP 11387280A JP 11387280 A JP11387280 A JP 11387280A JP S5737884 A JPS5737884 A JP S5737884A
Authority
JP
Japan
Prior art keywords
layer
buried
epitaxial
resistance
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11387280A
Other languages
Japanese (ja)
Inventor
Haruji Futami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11387280A priority Critical patent/JPS5737884A/en
Publication of JPS5737884A publication Critical patent/JPS5737884A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

Abstract

PURPOSE:To obtain a diode excellent in the noise characteristics and low in the operational resistance by providing a P<+> layer to be connected to a P<+> buried layer having an N epitaxial layer laid on a P layer with an N<+> buried layer while an N<+> layer is provided on an N epitaxial layer on the surface of the P<+> layer. CONSTITUTION:An N epitaxial layer 28 is made over an N<+> buried layer 27 provided on a P type substrate 26 and an N epitaxial layer 30 is made after a P<+> layer 29 is buried into the layer 28. When the epitaxial layers 29 and 30 are isolated by the P<+> layer, a P<+> layer 32 and an anode P<+> layer 33 are made to lead the anode electrode. Then, N<+> layer 34 is provided to attach electrodes 35 and 36 thereto. In operation, current flows vertically through a P-N junction 37 with a large sectional area hence not so big in the current density. Neither concentration of electric field nor heat generation occur on the surface of the substrate, meaning a high immunity to breakdown. As noise is reduced as generated at the center of re-connected section near the surface while the buried layers 29 and 27 are kept out of contact, there is no increase in the resistance of the P<+> buried layer 29 thereby minimizing the operational resistance. Thus, a Zener diode with a higher withstand voltage is obtained without additional process.
JP11387280A 1980-08-19 1980-08-19 Semiconductor device Pending JPS5737884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11387280A JPS5737884A (en) 1980-08-19 1980-08-19 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11387280A JPS5737884A (en) 1980-08-19 1980-08-19 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5737884A true JPS5737884A (en) 1982-03-02

Family

ID=14623219

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11387280A Pending JPS5737884A (en) 1980-08-19 1980-08-19 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5737884A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149152U (en) * 1984-03-15 1985-10-03 新日本無線株式会社 embedded zener diode
JPS60249375A (en) * 1984-05-09 1985-12-10 アナログ　デバイセス　インコーポレーテツド Ion implanting method for forming ic wafer having buried zener diode and ic structure formed by same method
JPS60260162A (en) * 1984-06-06 1985-12-23 Rohm Co Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60149152U (en) * 1984-03-15 1985-10-03 新日本無線株式会社 embedded zener diode
JPH0346507Y2 (en) * 1984-03-15 1991-10-01
JPS60249375A (en) * 1984-05-09 1985-12-10 アナログ　デバイセス　インコーポレーテツド Ion implanting method for forming ic wafer having buried zener diode and ic structure formed by same method
JPS60260162A (en) * 1984-06-06 1985-12-23 Rohm Co Ltd Manufacture of semiconductor device

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