JPS54131886A - High-speed switching thyristor - Google Patents

High-speed switching thyristor

Info

Publication number
JPS54131886A
JPS54131886A JP3954178A JP3954178A JPS54131886A JP S54131886 A JPS54131886 A JP S54131886A JP 3954178 A JP3954178 A JP 3954178A JP 3954178 A JP3954178 A JP 3954178A JP S54131886 A JPS54131886 A JP S54131886A
Authority
JP
Japan
Prior art keywords
layer
junction
short
electrode
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3954178A
Other languages
Japanese (ja)
Other versions
JPS6220712B2 (en
Inventor
Tetsuo Sueoka
Satoshi Ishibashi
Yasuo Kataoka
Yasuhide Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP3954178A priority Critical patent/JPS54131886A/en
Publication of JPS54131886A publication Critical patent/JPS54131886A/en
Publication of JPS6220712B2 publication Critical patent/JPS6220712B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase the area utilization rate and to reduce greatly the turn-off time by providing the P<+> layer within the P2 layer of the P1N1P2N2 structure to use it as the gate electrode to be led out to outside and then providing the short- circuit hole at the area opposing to the P<+> layer of the N2 layer. CONSTITUTION:The P<+> gate layer buried with the fixed pattern is formed within the P2 layer, and the plane form is discributed in the form of the trochoid curve or the radiant ray from the center toward the circumference. And electrode G is provided at the center part which is drilled up to the P<+> layer to be then led out to outside. For the N2 layer, short-circuit part 7 is provided at the position coincided with the pattern of the P<+> layer and the surface of the electrode is short- circuited with the cathode N2 via electrode K. In such constitution, displacement current id of junction N1P2 flows into the P<+> layer to fail to secure the direct forward bias for junction P2N2. On the other hand, reverse bias current iv to be applied to junction P2N2 flows directly to the P<+> layer from short-circuit part 7 with virtual no bias given to junction P2N2, thus increasing the gate reverse bias effect. Furthermore, the area utilization rate becomes almost double, with the allowance current and the overcurrent rating increased more than double each.
JP3954178A 1978-04-04 1978-04-04 High-speed switching thyristor Granted JPS54131886A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3954178A JPS54131886A (en) 1978-04-04 1978-04-04 High-speed switching thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3954178A JPS54131886A (en) 1978-04-04 1978-04-04 High-speed switching thyristor

Publications (2)

Publication Number Publication Date
JPS54131886A true JPS54131886A (en) 1979-10-13
JPS6220712B2 JPS6220712B2 (en) 1987-05-08

Family

ID=12555903

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3954178A Granted JPS54131886A (en) 1978-04-04 1978-04-04 High-speed switching thyristor

Country Status (1)

Country Link
JP (1) JPS54131886A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835973A (en) * 1981-08-28 1983-03-02 Meidensha Electric Mfg Co Ltd Buried gate type gate turn-off thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5835973A (en) * 1981-08-28 1983-03-02 Meidensha Electric Mfg Co Ltd Buried gate type gate turn-off thyristor
JPS6364908B2 (en) * 1981-08-28 1988-12-14

Also Published As

Publication number Publication date
JPS6220712B2 (en) 1987-05-08

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