JPS5745278A - 3-terminal bidirectional thyristor - Google Patents

3-terminal bidirectional thyristor

Info

Publication number
JPS5745278A
JPS5745278A JP12050180A JP12050180A JPS5745278A JP S5745278 A JPS5745278 A JP S5745278A JP 12050180 A JP12050180 A JP 12050180A JP 12050180 A JP12050180 A JP 12050180A JP S5745278 A JPS5745278 A JP S5745278A
Authority
JP
Japan
Prior art keywords
region
type
bidirectional thyristor
terminal bidirectional
facing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12050180A
Other languages
Japanese (ja)
Inventor
Tomihisa Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12050180A priority Critical patent/JPS5745278A/en
Publication of JPS5745278A publication Critical patent/JPS5745278A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To improve the gate sensitivity by cutting most of reactive current with a mesa structure. CONSTITUTION:A first p type region 2 and a second p type region 3 are formed on an n type semiconductor substrate 1. A second n type rgion 4 is formed on a part of the surface of the region 3, a third n type region 5 on a part of the surface of the region 2 not facing the region 4 and a fourth n type 6 on a part of the surface of th region 3 facing the region 5 and near the region 4. Mesa grooves 12 and 14 are provided as attaining the region 1 from both the main surface sides, and covered with insulators 13 and 15 such as glass respectively.
JP12050180A 1980-08-29 1980-08-29 3-terminal bidirectional thyristor Pending JPS5745278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12050180A JPS5745278A (en) 1980-08-29 1980-08-29 3-terminal bidirectional thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12050180A JPS5745278A (en) 1980-08-29 1980-08-29 3-terminal bidirectional thyristor

Publications (1)

Publication Number Publication Date
JPS5745278A true JPS5745278A (en) 1982-03-15

Family

ID=14787756

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12050180A Pending JPS5745278A (en) 1980-08-29 1980-08-29 3-terminal bidirectional thyristor

Country Status (1)

Country Link
JP (1) JPS5745278A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994028586A1 (en) * 1993-06-01 1994-12-08 Komatsu Ltd. Semiconductor device having high breakdown strength

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543656U (en) * 1977-06-13 1979-01-11
JPS5478986A (en) * 1977-12-06 1979-06-23 Mitsubishi Electric Corp Triac

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543656U (en) * 1977-06-13 1979-01-11
JPS5478986A (en) * 1977-12-06 1979-06-23 Mitsubishi Electric Corp Triac

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994028586A1 (en) * 1993-06-01 1994-12-08 Komatsu Ltd. Semiconductor device having high breakdown strength

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