JPS5422180A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5422180A
JPS5422180A JP8604177A JP8604177A JPS5422180A JP S5422180 A JPS5422180 A JP S5422180A JP 8604177 A JP8604177 A JP 8604177A JP 8604177 A JP8604177 A JP 8604177A JP S5422180 A JPS5422180 A JP S5422180A
Authority
JP
Japan
Prior art keywords
main
thyristor
thyritor
thryitor
auxiliary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8604177A
Other languages
Japanese (ja)
Other versions
JPS584827B2 (en
Inventor
Katsumi Akabane
Junichi Takita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP52086041A priority Critical patent/JPS584827B2/en
Publication of JPS5422180A publication Critical patent/JPS5422180A/en
Publication of JPS584827B2 publication Critical patent/JPS584827B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To increase both di/dt and dv/dt rating quantity by providing the main gate electrode between the main thyritor part which is continuous via the nack part comprising the same conduction type resistance layer and the auxiliary thryitor part.
JP52086041A 1977-07-20 1977-07-20 thyristor Expired JPS584827B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52086041A JPS584827B2 (en) 1977-07-20 1977-07-20 thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52086041A JPS584827B2 (en) 1977-07-20 1977-07-20 thyristor

Publications (2)

Publication Number Publication Date
JPS5422180A true JPS5422180A (en) 1979-02-19
JPS584827B2 JPS584827B2 (en) 1983-01-27

Family

ID=13875584

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52086041A Expired JPS584827B2 (en) 1977-07-20 1977-07-20 thyristor

Country Status (1)

Country Link
JP (1) JPS584827B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445133A (en) * 1980-08-22 1984-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0526340Y2 (en) * 1985-02-06 1993-07-02

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034784A (en) * 1973-08-01 1975-04-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5034784A (en) * 1973-08-01 1975-04-03

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4445133A (en) * 1980-08-22 1984-04-24 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device

Also Published As

Publication number Publication date
JPS584827B2 (en) 1983-01-27

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