JPS53128987A - Semiconductor control rectifying device - Google Patents

Semiconductor control rectifying device

Info

Publication number
JPS53128987A
JPS53128987A JP4208677A JP4208677A JPS53128987A JP S53128987 A JPS53128987 A JP S53128987A JP 4208677 A JP4208677 A JP 4208677A JP 4208677 A JP4208677 A JP 4208677A JP S53128987 A JPS53128987 A JP S53128987A
Authority
JP
Japan
Prior art keywords
rectifying device
semiconductor control
control rectifying
short
emitter layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4208677A
Other languages
Japanese (ja)
Other versions
JPS6122473B2 (en
Inventor
Minami Takeuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4208677A priority Critical patent/JPS53128987A/en
Publication of JPS53128987A publication Critical patent/JPS53128987A/en
Publication of JPS6122473B2 publication Critical patent/JPS6122473B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Abstract

PURPOSE:To increase the dv/dt limit amount as a whole, by installing the short-circuit emitter electrode at the area near the emitter layer and part opposing to the gate electrode of a short-circuit structure thyristor with nearly same distance and same space from the emitter layer end part.
JP4208677A 1977-04-16 1977-04-16 Semiconductor control rectifying device Granted JPS53128987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4208677A JPS53128987A (en) 1977-04-16 1977-04-16 Semiconductor control rectifying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4208677A JPS53128987A (en) 1977-04-16 1977-04-16 Semiconductor control rectifying device

Publications (2)

Publication Number Publication Date
JPS53128987A true JPS53128987A (en) 1978-11-10
JPS6122473B2 JPS6122473B2 (en) 1986-05-31

Family

ID=12626211

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4208677A Granted JPS53128987A (en) 1977-04-16 1977-04-16 Semiconductor control rectifying device

Country Status (1)

Country Link
JP (1) JPS53128987A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504435A (en) * 1973-05-17 1975-01-17
JPS51137388A (en) * 1975-05-06 1976-11-27 Siemens Ag Thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS504435A (en) * 1973-05-17 1975-01-17
JPS51137388A (en) * 1975-05-06 1976-11-27 Siemens Ag Thyristor

Also Published As

Publication number Publication date
JPS6122473B2 (en) 1986-05-31

Similar Documents

Publication Publication Date Title
SE7704360L (en) SELF-PROTECTED SEMICONDUCTOR DEVICE
JPS53110386A (en) Semiconductor device
JPS5380542A (en) Protective device of gate turn off thyristor
JPS53144689A (en) Thyristor
JPS53128987A (en) Semiconductor control rectifying device
JPS5529126A (en) Self-protecting type semiconductor controlled rectifying device
JPS5316584A (en) Semiconductor control device
JPS5210085A (en) Semiconductor device
JPS5399879A (en) Junction-type field effect thyristor
JPS53139460A (en) Semiconductor switching device
JPS5593262A (en) Semiconductor device
JPS5422180A (en) Thyristor
JPS53126283A (en) Semiconductor controlling rectifier
JPS5383473A (en) Thyristor
JPS5395583A (en) Mesa type semiconductor device
JPS5333524A (en) Solid state pickup device
JPS5388561A (en) Protecting method for gate turn-off thyristor
JPS5353984A (en) Semiconductor device
JPS5211778A (en) Semiconductor controlled rectifier
JPS5421286A (en) Reverse conductor thyristor
JPS5511314A (en) Thyristor
JPS5263687A (en) Semiconductor device
JPS52109881A (en) Semiconductor device with protective unit
JPS5391589A (en) Semiconductor device
JPS533071A (en) Semiconductor device