JPS55118671A - Transistor - Google Patents

Transistor

Info

Publication number
JPS55118671A
JPS55118671A JP2530079A JP2530079A JPS55118671A JP S55118671 A JPS55118671 A JP S55118671A JP 2530079 A JP2530079 A JP 2530079A JP 2530079 A JP2530079 A JP 2530079A JP S55118671 A JPS55118671 A JP S55118671A
Authority
JP
Japan
Prior art keywords
emitter
region
base
increase
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2530079A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2530079A priority Critical patent/JPS55118671A/en
Publication of JPS55118671A publication Critical patent/JPS55118671A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Abstract

PURPOSE:To increase the electrostatic breakdown withstand voltage between the emitter and the base of a transistor by providing deeper band-like emitter region making contact with the portion of the vicinity of a base electrode on the surface of the emitter and the base junction portion. CONSTITUTION:A second conducting base region 2 is formed in a first conducting collector region 1. A deeper diffused region 4 is formed than the other emitter region 3 in the vicinity of the base electrode 7 of the emitter and the base junction of the first conducting emitter region 3 in the base region 2. Thus, since the region 4 is deeper than the other emitter region 3, the portion facing oppositely with the base electrode of the emitter and the base junction becomes wide to increase the current path. Accordingly, it can increase the electrostatic breakdown withstand voltage between the emitter and the base at the transistor.
JP2530079A 1979-03-05 1979-03-05 Transistor Pending JPS55118671A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2530079A JPS55118671A (en) 1979-03-05 1979-03-05 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2530079A JPS55118671A (en) 1979-03-05 1979-03-05 Transistor

Publications (1)

Publication Number Publication Date
JPS55118671A true JPS55118671A (en) 1980-09-11

Family

ID=12162160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2530079A Pending JPS55118671A (en) 1979-03-05 1979-03-05 Transistor

Country Status (1)

Country Link
JP (1) JPS55118671A (en)

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