JPS57181160A - Transistor - Google Patents

Transistor

Info

Publication number
JPS57181160A
JPS57181160A JP6634581A JP6634581A JPS57181160A JP S57181160 A JPS57181160 A JP S57181160A JP 6634581 A JP6634581 A JP 6634581A JP 6634581 A JP6634581 A JP 6634581A JP S57181160 A JPS57181160 A JP S57181160A
Authority
JP
Japan
Prior art keywords
region
emitter
regions
shaped
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6634581A
Other languages
Japanese (ja)
Inventor
Tadahiko Tanaka
Tsutomu Nozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP6634581A priority Critical patent/JPS57181160A/en
Publication of JPS57181160A publication Critical patent/JPS57181160A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To contrive an increase in current capacity by a method wherein a mesh-shaped base electrode is arranged so that insular-shaped emitter regions may be surrounded by the mesh-shaped base electrode and emitter electrodes are provided on most of the whole surfaces of the emitter regions. CONSTITUTION:A mesh-shaped emitter region 22 is provided on the whole surface of a base region 21 in the collector region 20 of an Si substrate and many contact regions 23... in the base region 21 are arranged in insular shape by completely surrounding by the emitter region. Emitter electrodes 24 are ohmically contacted with most of the whole surface of the region 22. Each electrode 24 ohmically contacts with each contact region 23 by covering the surfaces of the emitter regions 24 with insulators 25 and by providing electrode holes on the contact regions 23 in the base region 21. In this way, an increase in the areas of the emitter electrodes is contrived to increases current capacity.
JP6634581A 1981-04-30 1981-04-30 Transistor Pending JPS57181160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6634581A JPS57181160A (en) 1981-04-30 1981-04-30 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6634581A JPS57181160A (en) 1981-04-30 1981-04-30 Transistor

Publications (1)

Publication Number Publication Date
JPS57181160A true JPS57181160A (en) 1982-11-08

Family

ID=13313168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6634581A Pending JPS57181160A (en) 1981-04-30 1981-04-30 Transistor

Country Status (1)

Country Link
JP (1) JPS57181160A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115365A (en) * 1984-07-02 1986-01-23 Sanyo Electric Co Ltd Transistor
JPS6129173A (en) * 1984-07-18 1986-02-10 Sanyo Electric Co Ltd Transistor
JPH02290028A (en) * 1989-04-28 1990-11-29 Tokai Rika Co Ltd Bipolar transistor
JPH04180629A (en) * 1990-11-15 1992-06-26 Nec Yamagata Ltd Semiconductor device
JPH04216633A (en) * 1990-12-18 1992-08-06 Nec Yamagata Ltd Semiconductor device
US5296732A (en) * 1988-03-02 1994-03-22 Kabushiki Kaisha Tokai Rika Denki Seisakusho Bipolar transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056177A (en) * 1973-09-14 1975-05-16
JPS5138879A (en) * 1974-09-27 1976-03-31 Hitachi Ltd

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5056177A (en) * 1973-09-14 1975-05-16
JPS5138879A (en) * 1974-09-27 1976-03-31 Hitachi Ltd

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6115365A (en) * 1984-07-02 1986-01-23 Sanyo Electric Co Ltd Transistor
JPS6129173A (en) * 1984-07-18 1986-02-10 Sanyo Electric Co Ltd Transistor
US5296732A (en) * 1988-03-02 1994-03-22 Kabushiki Kaisha Tokai Rika Denki Seisakusho Bipolar transistor
US5594271A (en) * 1988-03-02 1997-01-14 Kabushiki Kaisha Tokai Rika Denki Seisakusho Load current detecting device including a multi-emitter bipolar transistor
JPH02290028A (en) * 1989-04-28 1990-11-29 Tokai Rika Co Ltd Bipolar transistor
JPH04180629A (en) * 1990-11-15 1992-06-26 Nec Yamagata Ltd Semiconductor device
JPH04216633A (en) * 1990-12-18 1992-08-06 Nec Yamagata Ltd Semiconductor device

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