GB979990A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB979990A
GB979990A GB1123363A GB1123363A GB979990A GB 979990 A GB979990 A GB 979990A GB 1123363 A GB1123363 A GB 1123363A GB 1123363 A GB1123363 A GB 1123363A GB 979990 A GB979990 A GB 979990A
Authority
GB
United Kingdom
Prior art keywords
slab
base
contact
semi
leads
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1123363A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB979990A publication Critical patent/GB979990A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
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    • H01L2224/45001—Core members of the connector
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    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/85444—Gold (Au) as principal constituent
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/12036—PN diode
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    • H01L2924/1301—Thyristor
    • H01L2924/13034—Silicon Controlled Rectifier [SCR]

Abstract

979,990. Semi-conductor devices. GENERAL ELECTRIC CO. March 21, 1963 [March 23, 1962], No. 11233/63. Heading H1K. A semi-conductor device comprises a body of semi-conductor material having a pair of spaced base electrodes of different contact area, and a zone of opposite conductivity type adjacent the smaller base electrode forming a PN junction with the body. The device may comprise a unijunction transistor wherein most of the resistance in the body between the two base electrodes is adjacent the smaller electrode, allowing the closer spacing therefrom of the control PN emitter junction and electrode, and thus providing a shorter turn-on time, a higher stand-off ratio and a lower emitter saturation voltage. The unijunction transistor may comprise, Fig. 1, fernico conductive member 8 having two openings through which extensions 3 of a glass insulating base extend. Leads 4 and 5 extend through the glass base and the openings and are respectively connected to leads 11 and 12. A third lead 6, is connected to member 8. A slab of N-type semi-conductor 10 is soldered by a gold/antimony alloy to the gold-plated surface of member 8, thus forming a large area base contact, having a lead 6. Lead 11 is also of the gold/antimony alloy and forms a second small area base contact with slab 10. Lead 12 is of aluminium and forms a rectifying contact with the slab 10. Leads 11 and 12 are fused to the slab by the passage of large current pulses. A cap 2 is provided. The rectifying contact may be made to the side of the slab, Fig. 4 (not shown). Alternatively the slab 20, Figs. 5 and 6, may be formed with an etched base 21, having the smaller base electrode 22 connected to the bottom thereof. The large area base contact 24 is made to the other side of the slab, the leads thereto also serving to support the slab, and the rectifying contact 23 is also made to the other side of the slab, opposite the positions of contact 22. A layer of semi-conductive material may be applied by diffusion or epitaxial growth to the upper surface of the slab 20, of lower resistivity than the slab, but of the same type of conductivity and having a thickness less than the spacing between contacts 22 and 23.
GB1123363A 1962-03-23 1963-03-21 Improvements in or relating to semiconductor devices Expired GB979990A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US18205762 US3253196A (en) 1962-03-23 1962-03-23 Unijunction transistors

Publications (1)

Publication Number Publication Date
GB979990A true GB979990A (en) 1965-01-06

Family

ID=22666904

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1123363A Expired GB979990A (en) 1962-03-23 1963-03-21 Improvements in or relating to semiconductor devices

Country Status (5)

Country Link
US (1) US3253196A (en)
DE (2) DE1875627U (en)
GB (1) GB979990A (en)
NL (2) NL138894B (en)
SE (1) SE311953B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436617A (en) * 1966-09-01 1969-04-01 Motorola Inc Semiconductor device
US3439237A (en) * 1966-10-31 1969-04-15 Gen Electric Analogue unijunction device
US3414775A (en) * 1967-03-03 1968-12-03 Ibm Heat dissipating module assembly and method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037293A (en) * 1951-05-19 1953-09-15 Licentia Gmbh Electrically controlled dry rectifier and its manufacturing process
US2769926A (en) * 1953-03-09 1956-11-06 Gen Electric Non-linear resistance device
US3081421A (en) * 1954-08-17 1963-03-12 Gen Motors Corp Unipolar transistor
DE1068301B (en) * 1955-11-12 1959-11-05
US2975342A (en) * 1957-08-16 1961-03-14 Research Corp Narrow base planar junction punch-thru diode
US2947925A (en) * 1958-02-21 1960-08-02 Motorola Inc Transistor and method of making the same
US3025438A (en) * 1959-09-18 1962-03-13 Tungsol Electric Inc Field effect transistor
US3114867A (en) * 1960-09-21 1963-12-17 Rca Corp Unipolar transistors and assemblies therefor

Also Published As

Publication number Publication date
NL138894B (en) 1973-05-15
DE1464633A1 (en) 1969-05-22
US3253196A (en) 1966-05-24
DE1875627U (en) 1963-07-18
DE1464633B2 (en) 1976-05-26
SE311953B (en) 1969-06-30
NL290534A (en) 1900-01-01

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