JPS5598857A - Planar type semiconductor device - Google Patents

Planar type semiconductor device

Info

Publication number
JPS5598857A
JPS5598857A JP590279A JP590279A JPS5598857A JP S5598857 A JPS5598857 A JP S5598857A JP 590279 A JP590279 A JP 590279A JP 590279 A JP590279 A JP 590279A JP S5598857 A JPS5598857 A JP S5598857A
Authority
JP
Japan
Prior art keywords
region
type
shallow
substrate
making contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP590279A
Other languages
Japanese (ja)
Inventor
Ikunori Takada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP590279A priority Critical patent/JPS5598857A/en
Publication of JPS5598857A publication Critical patent/JPS5598857A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To enhance the withstand voltage and reliability of a planar semiconductor device by forming additionally a shallow region becoming a channel stopper between the base region and the anode region of a planar thyristor and a depletion ring making contact with the shallow region. CONSTITUTION:A p-type anode region 2 is sorrounded on the side and back surfaces of an n-type semiconductor substrate 1, and an oxide film 5 is coated on the surface of the substrate 1. Then, an opening is perforated at the film 5, a p-type base region 3 is diffused in the substrate 1, and an n-type emitter region 4 is formed in the region 3 to thereby form a planar thyristor. In this configuration there are formed a shallow n-type region 15a in the vicinity of the region 3 and a deep p- type region 16a making contact with the region 15a using the opening perforated at the film 5 in the substrate 1 between the regions 3 and 2. There are also formed a shallow n-type region 15b in the vicinity of the region 2 of the side wall and a deep p-type region 16b making contact with the region 15b. Negative voltage is applied to the cathode electrode 6 on the region 6, and positive voltage is applied to the electrode 7 on the back surface of the region 2.
JP590279A 1979-01-19 1979-01-19 Planar type semiconductor device Pending JPS5598857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP590279A JPS5598857A (en) 1979-01-19 1979-01-19 Planar type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP590279A JPS5598857A (en) 1979-01-19 1979-01-19 Planar type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5598857A true JPS5598857A (en) 1980-07-28

Family

ID=11623819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP590279A Pending JPS5598857A (en) 1979-01-19 1979-01-19 Planar type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5598857A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778171A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Thyristor
EP1076363A2 (en) * 1999-08-11 2001-02-14 Dynex Semiconductor Limited High voltage semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5778171A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Thyristor
EP1076363A2 (en) * 1999-08-11 2001-02-14 Dynex Semiconductor Limited High voltage semiconductor device
EP1076363A3 (en) * 1999-08-11 2003-07-30 Dynex Semiconductor Limited High voltage semiconductor device

Similar Documents

Publication Publication Date Title
JPS6489365A (en) Semiconductor device
GB949646A (en) Improvements in or relating to semiconductor devices
CH609814A5 (en) Regenerative multilayer semiconductor switching device
GB983266A (en) Semiconductor switching devices
JPS5598857A (en) Planar type semiconductor device
JPS5548958A (en) Semiconductor device
JPS5527618A (en) Planar diode
JPS54129887A (en) Semiconductor integrated circuit
JPS6482560A (en) Lateral bipolar transistor
JPS56165358A (en) Semiconductor device
JPS556847A (en) Semiconductor device
JPS57128960A (en) Semiconductor device
JPS55165673A (en) Semiconductor device
JPS5651868A (en) Semiconductor device
JPS55120169A (en) Semiconductor device
JPS55140267A (en) Semiconductor device
JPS5612779A (en) Zener diode
JPS5546585A (en) Complementary insulated gate field effect semiconductor device
JPS5617064A (en) Transistor
JPS575358A (en) Semiconductor device and manufacture thereof
JPS5797668A (en) Semiconductor device
JPS55120166A (en) Semiconductor device
JPS55117273A (en) Semiconductor device
JPS55103760A (en) Planar semiconductor device
JPS55154760A (en) Semiconductor device