CH609814A5 - Regenerative multilayer semiconductor switching device - Google Patents
Regenerative multilayer semiconductor switching deviceInfo
- Publication number
- CH609814A5 CH609814A5 CH933875A CH933875A CH609814A5 CH 609814 A5 CH609814 A5 CH 609814A5 CH 933875 A CH933875 A CH 933875A CH 933875 A CH933875 A CH 933875A CH 609814 A5 CH609814 A5 CH 609814A5
- Authority
- CH
- Switzerland
- Prior art keywords
- regenerative
- type
- switching device
- semiconductor switching
- multilayer semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 230000001172 regenerating effect Effects 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/747—Bidirectional devices, e.g. triacs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
The device does not require, for its operation, any substantial lateral switching current. This device comprises three layers (72, 76, 80) of N-type semiconductor material and three layers (74, 78, 82) of P-type semiconductor material in alternation, which form a plurality of P-N junctions. The N-type outer layer (72) is connected to a metal electrode (88) forming a cathode terminal and comprises, within a part of its external surface, a seventh layer (84) which is of P+ type and which is highly doped and is connected to a gate electrode (86). A metal electrode (90) makes contact with the highly doped P-type outer layer (82) in order to form an anode terminal. This device can be formed in a single semiconductor body, along with other circuits. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48878974A | 1974-07-15 | 1974-07-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH609814A5 true CH609814A5 (en) | 1979-03-15 |
Family
ID=23941129
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1346074A CH609714A5 (en) | 1974-07-15 | 1974-01-07 | Process for the production of a hydrophilic surface on silicone rubber mouldings |
CH933875A CH609814A5 (en) | 1974-07-15 | 1975-07-15 | Regenerative multilayer semiconductor switching device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1346074A CH609714A5 (en) | 1974-07-15 | 1974-01-07 | Process for the production of a hydrophilic surface on silicone rubber mouldings |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS5133986A (en) |
BE (1) | BE831400A (en) |
CH (2) | CH609714A5 (en) |
DE (1) | DE2531249A1 (en) |
FR (1) | FR2279224A1 (en) |
GB (1) | GB1513000A (en) |
NL (1) | NL7508200A (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2560441B1 (en) * | 1984-02-28 | 1986-06-13 | Telemecanique Electrique | TWO-LAYER TRANSMITTER THYRISTOR STRUCTURE FOR HIGH OR HIGH VOLTAGE SWITCHING |
FR2574594B1 (en) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | INTEGRATED TRIAC STRUCTURE CONTROLLED BY DIAC |
US4918505A (en) * | 1988-07-19 | 1990-04-17 | Tektronix, Inc. | Method of treating an integrated circuit to provide a temperature sensor that is integral therewith |
FR2688941B1 (en) * | 1992-03-20 | 1994-06-17 | Sgs Thomson Microelectronics | ALTERNATIVE VOLTAGE SWITCH TRIGGERED ON A SPECIFIED ALTERNATION AND PERIOD CONDUCTION. |
DE19721365A1 (en) * | 1997-05-22 | 1998-11-26 | Asea Brown Boveri | Controllable thyristor on both sides |
US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
AU2014302625B2 (en) | 2013-06-24 | 2017-05-11 | Ideal Power Inc. | Systems, circuits, devices, and methods with bidirectional bipolar transistors |
US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
US9660551B2 (en) | 2014-11-06 | 2017-05-23 | Ideal Power, Inc. | Operating point optimization with double-base-contact bidirectional bipolar junction transistor circuits, methods, and systems |
CN109326640A (en) * | 2018-10-25 | 2019-02-12 | 深圳市鹏朗贸易有限责任公司 | A kind of door pole stream-exchanging thyristor and its manufacturing method |
-
1974
- 1974-01-07 CH CH1346074A patent/CH609714A5/en not_active IP Right Cessation
-
1975
- 1975-07-09 NL NL7508200A patent/NL7508200A/en not_active Application Discontinuation
- 1975-07-09 GB GB2889075A patent/GB1513000A/en not_active Expired
- 1975-07-10 FR FR7521677A patent/FR2279224A1/en active Granted
- 1975-07-12 DE DE19752531249 patent/DE2531249A1/en not_active Withdrawn
- 1975-07-15 BE BE158328A patent/BE831400A/en unknown
- 1975-07-15 CH CH933875A patent/CH609814A5/en not_active IP Right Cessation
- 1975-07-15 JP JP8660375A patent/JPS5133986A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS5133986A (en) | 1976-03-23 |
FR2279224A1 (en) | 1976-02-13 |
GB1513000A (en) | 1978-06-01 |
FR2279224B1 (en) | 1981-12-24 |
BE831400A (en) | 1976-01-15 |
NL7508200A (en) | 1976-01-19 |
CH609714A5 (en) | 1979-03-15 |
DE2531249A1 (en) | 1976-02-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US2993154A (en) | Semiconductor switch | |
GB1365714A (en) | Thyristor power switching circuits | |
CH609814A5 (en) | Regenerative multilayer semiconductor switching device | |
JPS5754370A (en) | Insulating gate type transistor | |
JPS54157092A (en) | Semiconductor integrated circuit device | |
JPS5598858A (en) | Gate turn-off thyristor | |
JPS55133574A (en) | Insulated gate field effect transistor | |
GB1507091A (en) | Schottky-gate field-effect transistors | |
GB983266A (en) | Semiconductor switching devices | |
JPS55102267A (en) | Semiconductor control element | |
JPS55102268A (en) | Protecting circuit for semiconductor device | |
JPS5753944A (en) | Semiconductor integrated circuit | |
JPS57172765A (en) | Electrostatic induction thyristor | |
FR2235493A1 (en) | Integrated circuit for high speed switching - three zones with Schottky boundary between one pair | |
JPS5588372A (en) | Lateral type transistor | |
SE7413032L (en) | ||
JPS556847A (en) | Semiconductor device | |
ES487066A1 (en) | High voltage dielectrically isolated solid-state switch | |
JPS5561063A (en) | Schottky barrier diode built-in transistor | |
JPS5640277A (en) | Semiconductor device | |
JPS57206072A (en) | Semiconductor device | |
JPS5713758A (en) | Semiconductor device | |
JPS5596678A (en) | Reverse conducting thyristor | |
JPS56112762A (en) | Semiconductor device | |
GB1465709A (en) | Thyristor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |