FR2235493A1 - Integrated circuit for high speed switching - three zones with Schottky boundary between one pair - Google Patents

Integrated circuit for high speed switching - three zones with Schottky boundary between one pair

Info

Publication number
FR2235493A1
FR2235493A1 FR7422786A FR7422786A FR2235493A1 FR 2235493 A1 FR2235493 A1 FR 2235493A1 FR 7422786 A FR7422786 A FR 7422786A FR 7422786 A FR7422786 A FR 7422786A FR 2235493 A1 FR2235493 A1 FR 2235493A1
Authority
FR
France
Prior art keywords
zone
integrated circuit
high speed
speed switching
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7422786A
Other languages
French (fr)
Other versions
FR2235493B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2235493A1 publication Critical patent/FR2235493A1/en
Application granted granted Critical
Publication of FR2235493B1 publication Critical patent/FR2235493B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor switching device suitable for integrated circuit production and capable of high speed switching, with a first zone of given conductivity type, a second zone of complementary type, and a zone near the first with high doping density of the first conductivity type; an electrode is formed in galvanic contact with the latter zone which also contacts the first zone to form a Schottky type boundary layer between them. PN junction insulation comprises a leakage current generated by a parasitic transistor and flowing through the PN insulation.
FR7422786A 1973-06-28 1974-06-28 Integrated circuit for high speed switching - three zones with Schottky boundary between one pair Granted FR2235493A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7318073A JPS5548705B2 (en) 1973-06-28 1973-06-28

Publications (2)

Publication Number Publication Date
FR2235493A1 true FR2235493A1 (en) 1975-01-24
FR2235493B1 FR2235493B1 (en) 1977-10-07

Family

ID=13510672

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7422786A Granted FR2235493A1 (en) 1973-06-28 1974-06-28 Integrated circuit for high speed switching - three zones with Schottky boundary between one pair

Country Status (6)

Country Link
JP (1) JPS5548705B2 (en)
CA (1) CA1002208A (en)
DE (1) DE2431011A1 (en)
FR (1) FR2235493A1 (en)
IT (1) IT1015565B (en)
NL (1) NL7408561A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52106528A (en) * 1976-03-03 1977-09-07 Nissan Motor Co Ltd Steering power control apparatus for power steering system
US4156246A (en) * 1977-05-25 1979-05-22 Bell Telephone Laboratories, Incorporated Combined ohmic and Schottky output transistors for logic circuit
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
US4982244A (en) * 1982-12-20 1991-01-01 National Semiconductor Corporation Buried Schottky clamped transistor
US5083185A (en) * 1985-02-15 1992-01-21 Agency Of Industrial Science & Technology, Ministry Of International Trade & Industry Surge absorption device
JPS61205153U (en) * 1986-06-12 1986-12-24
EP2896482A3 (en) 2014-01-15 2015-08-19 Paolo Ficai A finishing grinding wheel and a forming method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
CA1002208A (en) 1976-12-21
NL7408561A (en) 1974-12-31
FR2235493B1 (en) 1977-10-07
JPS5548705B2 (en) 1980-12-08
DE2431011A1 (en) 1975-01-30
JPS5023178A (en) 1975-03-12
IT1015565B (en) 1977-05-20

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Legal Events

Date Code Title Description
ST Notification of lapse