JPS61205153U

JPS61205153U -

Info

Publication number: JPS61205153U
Application number: JP8981686U
Authority: JP
Priority date: 1986-06-12
Filing date: 1986-06-12
Publication date: 1986-12-24

Description

[Brief explanation of the drawing]

第１図は従来の半導体装置の１例を示す断面図
、第２図は本考案の半導体装置の第１の実施例を
示す断面図、第３図は本考案の半導体装置の第２
の実施例を示す断面図、第４図は本考案の半導体
装置の第３の実施例を示す断面図である。１１……半導体基板、１２……不純物添加領域
、１３，１３′……絶縁膜、１４……外部電極、
４１，５１，６１……Ｎ型シリコン基板、４２…
…Ｐ型ベース領域、４３……Ｎ型エミツタ領域、
４４……Ｎ型高濃度領域、４５……絶縁膜、４６
，４６′，４６″……アルミニウム電極、５１…
…Ｎ型シリコン基板、５２，５３……Ｐ型ソース
及びドレイン領域、５５……絶縁膜、５６……ア
ルミニウム電極、６１……Ｎ型シリコン基板、６
２……Ｐ型不純物添加領域、６５……絶縁膜、６
６……アルミニウム電極。 1 is a sectional view showing an example of a conventional semiconductor device, FIG. 2 is a sectional view showing a first embodiment of the semiconductor device of the present invention, and FIG. 3 is a sectional view of a second embodiment of the semiconductor device of the present invention.
FIG. 4 is a sectional view showing a third embodiment of the semiconductor device of the present invention. 11... Semiconductor substrate, 12... Impurity doped region, 13, 13'... Insulating film, 14... External electrode,
41, 51, 61...N-type silicon substrate, 42...
...P type base region, 43...N type emitter region,
44...N-type high concentration region, 45...Insulating film, 46
, 46', 46''...aluminum electrode, 51...
...N type silicon substrate, 52, 53...P type source and drain region, 55...Insulating film, 56...Aluminum electrode, 61...N type silicon substrate, 6
2... P-type impurity doped region, 65... Insulating film, 6
6...Aluminum electrode.

Claims

[Scope of utility model registration request]

a semiconductor substrate of one conductivity type, an impurity doped region formed in a surface region of the semiconductor substrate and having a higher impurity concentration than the semiconductor substrate, and a first insulating film with a first thickness existing on the impurity doped region. and a second insulating film existing on the semiconductor substrate and having a second thickness thinner than the first film thickness, and a portion of each of the first and second insulating films are successively removed. an opening that continuously exposes a portion of the semiconductor substrate and the impurity-doped region; and a second insulating film deposited in the opening and in contact with the impurity-doped region and the semiconductor substrate and on the second insulating film. What is claimed is: 1. A semiconductor device comprising: an electrode extending from the top to the bottom;