JPS62147363U - - Google Patents
Info
- Publication number
- JPS62147363U JPS62147363U JP3627187U JP3627187U JPS62147363U JP S62147363 U JPS62147363 U JP S62147363U JP 3627187 U JP3627187 U JP 3627187U JP 3627187 U JP3627187 U JP 3627187U JP S62147363 U JPS62147363 U JP S62147363U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- electrode
- conductivity type
- region
- type formed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Thyristors (AREA)
Description
第１図はゲート電極を持たない従来技術による
サイリスタの断面図である。第２図は本考案によ
る構造のサイリスタの第１の実施例を示す断面図
であり、第３図は本考案による構造のサイリスタ
の第２の実施例を示す断面図である。
なお図において、１は第１層（アノード層）、
２は第２層（Ｎ型ベース層）、３は第３層（Ｐ型
ベース層）、４は第４層（カソード層）、５はシ
リコン酸化膜、６はカソード電極、７はアノード
電極、８は溝、９は周辺部の電流成分、１０，１
１は中央部の電流成分である。
FIG. 1 is a cross-sectional view of a prior art thyristor without a gate electrode. FIG. 2 is a sectional view showing a first embodiment of a thyristor having a structure according to the present invention, and FIG. 3 is a sectional view showing a second embodiment of a thyristor having a structure according to the present invention. In the figure, 1 is the first layer (anode layer),
2 is a second layer (N-type base layer), 3 is a third layer (P-type base layer), 4 is a fourth layer (cathode layer), 5 is a silicon oxide film, 6 is a cathode electrode, 7 is an anode electrode, 8 is the groove, 9 is the current component in the peripheral area, 10, 1
1 is the current component at the center.
Claims (1)
体領域上に形成された他の導電型の第２の半導体
領域と、該第２の半導体領域上に形成された前記
一導電型の第３の半導体領域と、該第３の半導体
領域内に形成された前記他の導電型の領域であつ
て、該第３の半導体領域となすＰＮ接合が該第３
の半導体領域の一主表面で終端して表面に露出す
る第４の半導体領域と、前記第１の半導体領域の
裏面に形成された第１の電極と、前記第４の半導
体領域の表面に形成された第２の電極と、該第２
の電極と前記ＰＮ接合との間の前記第４の半導体
領域の表面領域に前記第２の電極を囲んで形成さ
れた溝とを含むことを特徴とする縦型サイリスタ
。 A first semiconductor region of one conductivity type, a second semiconductor region of another conductivity type formed on the first semiconductor region, and a second semiconductor region of the one conductivity type formed on the second semiconductor region. a third semiconductor region and a region of the other conductivity type formed in the third semiconductor region, the PN junction forming with the third semiconductor region being connected to the third semiconductor region;
a fourth semiconductor region terminated at one main surface of the semiconductor region and exposed to the surface; a first electrode formed on the back surface of the first semiconductor region; and a first electrode formed on the surface of the fourth semiconductor region. a second electrode that is
A vertical thyristor comprising: a groove formed in a surface region of the fourth semiconductor region between the electrode and the PN junction, surrounding the second electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3627187U JPS62147363U (en) | 1987-03-12 | 1987-03-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3627187U JPS62147363U (en) | 1987-03-12 | 1987-03-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62147363U true JPS62147363U (en) | 1987-09-17 |
Family
ID=30846521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3627187U Pending JPS62147363U (en) | 1987-03-12 | 1987-03-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62147363U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4994285A (en) * | 1973-01-12 | 1974-09-06 | ||
| JPS51113474A (en) * | 1975-03-29 | 1976-10-06 | Toshiba Corp | Semiconductor element and its manufacturing system |
| JPS51128266A (en) * | 1975-05-01 | 1976-11-09 | Sony Corp | Semiconductor unit |
-
1987
- 1987-03-12 JP JP3627187U patent/JPS62147363U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4994285A (en) * | 1973-01-12 | 1974-09-06 | ||
| JPS51113474A (en) * | 1975-03-29 | 1976-10-06 | Toshiba Corp | Semiconductor element and its manufacturing system |
| JPS51128266A (en) * | 1975-05-01 | 1976-11-09 | Sony Corp | Semiconductor unit |
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