JPS6338344U - - Google Patents

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Publication number
JPS6338344U
JPS6338344U JP13195186U JP13195186U JPS6338344U JP S6338344 U JPS6338344 U JP S6338344U JP 13195186 U JP13195186 U JP 13195186U JP 13195186 U JP13195186 U JP 13195186U JP S6338344 U JPS6338344 U JP S6338344U
Authority
JP
Japan
Prior art keywords
areas
contact
large current
semiconductor substrate
utility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13195186U
Other languages
Japanese (ja)
Other versions
JPH0547479Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986131951U priority Critical patent/JPH0547479Y2/ja
Publication of JPS6338344U publication Critical patent/JPS6338344U/ja
Application granted granted Critical
Publication of JPH0547479Y2 publication Critical patent/JPH0547479Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例の製造工程を順次示
す断面図、第2図は従来の大電流用整流素子の基
板の断面図である。 1:n形シリコン基板、21,22,23:p
領域、5,51,52,53:電極、7:絶縁膜
、8:接触板、13:アノード電極体。
FIG. 1 is a sectional view sequentially showing the manufacturing process of an embodiment of the present invention, and FIG. 2 is a sectional view of a substrate of a conventional large current rectifying element. 1: n-type silicon substrate, 21, 22, 23: p
Region, 5, 51, 52, 53: electrode, 7: insulating film, 8: contact plate, 13: anode electrode body.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体基板の一面側に複数の整流性接触領域が
形成され、該領域のうち選択された領域に被着さ
れた電極が共通電極体に接触したことを特徴とす
る大電流用整流素子。
1. A large current rectifying element, characterized in that a plurality of rectifying contact areas are formed on one side of a semiconductor substrate, and an electrode attached to a selected one of the areas is in contact with a common electrode body.
JP1986131951U 1986-08-28 1986-08-28 Expired - Lifetime JPH0547479Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986131951U JPH0547479Y2 (en) 1986-08-28 1986-08-28

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986131951U JPH0547479Y2 (en) 1986-08-28 1986-08-28

Publications (2)

Publication Number Publication Date
JPS6338344U true JPS6338344U (en) 1988-03-11
JPH0547479Y2 JPH0547479Y2 (en) 1993-12-14

Family

ID=31030880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986131951U Expired - Lifetime JPH0547479Y2 (en) 1986-08-28 1986-08-28

Country Status (1)

Country Link
JP (1) JPH0547479Y2 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136580A (en) * 1976-05-11 1977-11-15 Sumitomo Electric Ind Ltd Multidiodes
JPS6061746U (en) * 1983-09-30 1985-04-30 関西日本電気株式会社 diode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136580A (en) * 1976-05-11 1977-11-15 Sumitomo Electric Ind Ltd Multidiodes
JPS6061746U (en) * 1983-09-30 1985-04-30 関西日本電気株式会社 diode

Also Published As

Publication number Publication date
JPH0547479Y2 (en) 1993-12-14

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