JPS636753U - - Google Patents
Info
- Publication number
- JPS636753U JPS636753U JP10059386U JP10059386U JPS636753U JP S636753 U JPS636753 U JP S636753U JP 10059386 U JP10059386 U JP 10059386U JP 10059386 U JP10059386 U JP 10059386U JP S636753 U JPS636753 U JP S636753U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- conductivity type
- electrode
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000006698 induction Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図は本考案の静電誘導型半導体装置を示す
断面図、第２図イないし第２図ヘは、本考案装置
の製造方法の一例を示す断面図、第３図は従来装
置を示す断面図である。
２……ヘツダ、３……ケース、４……アノード
電極、５……アノード層、６……半導体基板、７
……ゲート層、８……カソード層、１０……カソ
ード電極、１１……ゲート電極、１２……ゲート
電極接続層。
FIG. 1 is a sectional view showing the electrostatic induction type semiconductor device of the present invention, FIGS. FIG. 2... Header, 3... Case, 4... Anode electrode, 5... Anode layer, 6... Semiconductor substrate, 7
... gate layer, 8 ... cathode layer, 10 ... cathode electrode, 11 ... gate electrode, 12 ... gate electrode connection layer.
Claims (1)
電型のアノード層と、前記基板の他面に選択的に
形成された逆導電型のゲート層と、このゲート層
を埋め込むように、前記基板の他面にエピタキシ
ヤル成長されたカソード層と、前記ゲート層と電
気的に連なり基板の一部が除去された領域に露出
するゲート電極接続層と、を備え、前記アノード
層、カソード層およびゲート電極接続層に夫々電
極を設け、前記カソード電極を高熱伝導体を介し
てヘツダに取付けると共に、前記アノード電極お
よびゲート電極をボンデイングにより外部端子と
接続したことを特徴とする静電誘導型半導体装置
。 an anode layer of an opposite conductivity type formed on one surface of a semiconductor substrate of one conductivity type; a gate layer of an opposite conductivity type selectively formed on the other surface of the substrate; A cathode layer epitaxially grown on the other surface, and a gate electrode connection layer electrically connected to the gate layer and exposed in a region where a portion of the substrate is removed, the anode layer, the cathode layer, and the gate. An electrostatic induction semiconductor device, characterized in that electrodes are provided on each electrode connection layer, the cathode electrode is attached to a header via a high heat conductor, and the anode electrode and gate electrode are connected to external terminals by bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10059386U JPS636753U (en) | 1986-06-30 | 1986-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10059386U JPS636753U (en) | 1986-06-30 | 1986-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS636753U true JPS636753U (en) | 1988-01-18 |
Family
ID=30970562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10059386U Pending JPS636753U (en) | 1986-06-30 | 1986-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636753U (en) |
-
1986
- 1986-06-30 JP JP10059386U patent/JPS636753U/ja active Pending
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