JPS63100853U - - Google Patents
Info
- Publication number
- JPS63100853U JPS63100853U JP19641886U JP19641886U JPS63100853U JP S63100853 U JPS63100853 U JP S63100853U JP 19641886 U JP19641886 U JP 19641886U JP 19641886 U JP19641886 U JP 19641886U JP S63100853 U JPS63100853 U JP S63100853U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate
- conductivity type
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000006698 induction Effects 0.000 claims 1
- 230000001939 inductive effect Effects 0.000 claims 1
- 230000003068 static effect Effects 0.000 claims 1
Landscapes
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
第１図ないし第４図は本考案の一実施例を示し
、第１図は上面図、第２図は第１図のＡ―Ａ線断
面図、第３図は第１図のＢ―Ｂ線断面図、第４図
はゲート電極接続層とゲート層との関係を示す平
面図である。第５図は、従来装置を示す断面図で
ある。
１……ゲート層、２……半導体層、３……アノ
ード層、４……カソード層、１０……ゲート電極
接続層。
1 to 4 show an embodiment of the present invention, in which FIG. 1 is a top view, FIG. 2 is a sectional view taken along line AA in FIG. 1, and FIG. 3 is a sectional view taken along line AA in FIG. 1. A line sectional view and FIG. 4 are plan views showing the relationship between the gate electrode connection layer and the gate layer. FIG. 5 is a sectional view showing a conventional device. 1... Gate layer, 2... Semiconductor layer, 3... Anode layer, 4... Cathode layer, 10... Gate electrode connection layer.
Claims (1)
導体層の一面に、一導電型のアノード層が形成さ
れると共に、前記半導体層の他面に逆導電型のカ
ソード層が形成された静電誘導型半導体装置にお
いて、前記ゲート層と接続されるゲート電極接続
層とゲート層との最長距離が一定になるように、
ゲート層およびゲート電極接続層を形成すると共
に、カソード電極を一電極面としたことを特徴と
する静電誘導型半導体装置。 An anode layer of one conductivity type is formed on one surface of a semiconductor layer of an opposite conductivity type in which a gate layer of one conductivity type is embedded, and a cathode layer of an opposite conductivity type is formed on the other surface of the semiconductor layer. In the inductive semiconductor device, the longest distance between the gate electrode connection layer and the gate layer connected to the gate layer is constant;
A static induction type semiconductor device characterized in that a gate layer and a gate electrode connection layer are formed, and a cathode electrode is used as one electrode surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19641886U JPS63100853U (en) | 1986-12-19 | 1986-12-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19641886U JPS63100853U (en) | 1986-12-19 | 1986-12-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63100853U true JPS63100853U (en) | 1988-06-30 |
Family
ID=31155222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19641886U Pending JPS63100853U (en) | 1986-12-19 | 1986-12-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63100853U (en) |
-
1986
- 1986-12-19 JP JP19641886U patent/JPS63100853U/ja active Pending
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