JPS6380864U - - Google Patents
Info
- Publication number
- JPS6380864U JPS6380864U JP17620286U JP17620286U JPS6380864U JP S6380864 U JPS6380864 U JP S6380864U JP 17620286 U JP17620286 U JP 17620286U JP 17620286 U JP17620286 U JP 17620286U JP S6380864 U JPS6380864 U JP S6380864U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity type
- gate layer
- opposite conductivity
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000006698 induction Effects 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Thyristors (AREA)
Description
第１図は本考案による静電誘導型半導体装置の
一実施例を示す断面図、第２図は本考案の静電誘
導型半導体装置の製造工程の一例を示す断面図、
第３図は本考案の他の実施例を示す断面図、第４
図は従来の静電誘導型半導体装置を示す断面図で
ある。
１……ゲート層、２……半導体層、３……アノ
ード層、４……カソード層、１１……高濃度ゲー
ト層、１２……低濃度ゲート層。
FIG. 1 is a cross-sectional view showing an example of the electrostatic induction type semiconductor device according to the present invention, and FIG. 2 is a cross-sectional view showing an example of the manufacturing process of the electrostatic induction type semiconductor device according to the present invention.
FIG. 3 is a sectional view showing another embodiment of the present invention;
The figure is a sectional view showing a conventional electrostatic induction type semiconductor device. 1...Gate layer, 2...Semiconductor layer, 3...Anode layer, 4...Cathode layer, 11...High concentration gate layer, 12...Low concentration gate layer.
Claims (1)
導体層の一面に、一導電型のアノード層が形成さ
れると共に、前記半導体層の他面に逆導電型のカ
ソード層が形成された静電誘導型半導体装置にお
いて、前記ゲート層に選択的に高濃度領域を設け
、ゲート層の不純物濃度に濃度差を設けたことを
特徴とする静電誘導型半導体装置。 An anode layer of one conductivity type is formed on one surface of a semiconductor layer of an opposite conductivity type in which a gate layer of one conductivity type is embedded, and a cathode layer of an opposite conductivity type is formed on the other surface of the semiconductor layer. An electrostatic induction type semiconductor device, characterized in that a high concentration region is selectively provided in the gate layer, and a concentration difference is provided in the impurity concentration of the gate layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17620286U JPS6380864U (en) | 1986-11-17 | 1986-11-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17620286U JPS6380864U (en) | 1986-11-17 | 1986-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6380864U true JPS6380864U (en) | 1988-05-27 |
Family
ID=31116222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17620286U Pending JPS6380864U (en) | 1986-11-17 | 1986-11-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6380864U (en) |
-
1986
- 1986-11-17 JP JP17620286U patent/JPS6380864U/ja active Pending