JPS62199965U - - Google Patents
Info
- Publication number
- JPS62199965U JPS62199965U JP8873686U JP8873686U JPS62199965U JP S62199965 U JPS62199965 U JP S62199965U JP 8873686 U JP8873686 U JP 8873686U JP 8873686 U JP8873686 U JP 8873686U JP S62199965 U JPS62199965 U JP S62199965U
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- amorphous semiconductor
- electrode
- photoelectric conversion
- conversion element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図はこの考案の一実施例による光電変換素
子を示す断面図、第２図は従来の光電変換素子を
示す断面図である。
１……基板、２……第１電極、３……アモルフ
アス半導体層、３ａ……段差部、４……第２電極
。なお、図中、同一符号は同一又は相当部分を示
す。
FIG. 1 is a sectional view showing a photoelectric conversion element according to an embodiment of this invention, and FIG. 2 is a sectional view showing a conventional photoelectric conversion element. DESCRIPTION OF SYMBOLS 1... Substrate, 2... First electrode, 3... Amorphous semiconductor layer, 3a... Step portion, 4... Second electrode. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (1)
と、この第１の電極のそれぞれに連続して形成さ
れたアモルフアス半導体層と、上記第１の電極の
形状によつて生じる上記アモルフアス半導体層表
面の段差部以外に上記第１の電極とそれぞれ対向
するように個別に形成された第２の電極とを備え
た光電変換素子。 A plurality of first electrodes formed in parallel on a substrate, an amorphous semiconductor layer formed continuously on each of the first electrodes, and the amorphous semiconductor produced by the shape of the first electrode. A photoelectric conversion element comprising, in addition to the step portion on the layer surface, second electrodes that are individually formed to face the first electrodes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8873686U JPS62199965U (en) | 1986-06-11 | 1986-06-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8873686U JPS62199965U (en) | 1986-06-11 | 1986-06-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62199965U true JPS62199965U (en) | 1987-12-19 |
Family
ID=30947096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8873686U Pending JPS62199965U (en) | 1986-06-11 | 1986-06-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62199965U (en) |
-
1986
- 1986-06-11 JP JP8873686U patent/JPS62199965U/ja active Pending