JPH02110354U - - Google Patents
Info
- Publication number
- JPH02110354U JPH02110354U JP1989018549U JP1854989U JPH02110354U JP H02110354 U JPH02110354 U JP H02110354U JP 1989018549 U JP1989018549 U JP 1989018549U JP 1854989 U JP1854989 U JP 1854989U JP H02110354 U JPH02110354 U JP H02110354U
- Authority
- JP
- Japan
- Prior art keywords
- common electrode
- output terminal
- individual electrodes
- semiconductor layer
- individual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
第１図ａは本考案に係わるラインセンサの一実
施例を示す平面図、第１図ｂは同じく断面図、第
２図は同じく共通電極と出力端子の接続の仕方を
示す図、第３図と第４図はそれぞれ従来のライン
センサを示す図である。
１……絶縁基板、２……個別電極、３……シリ
コン半導体層、４……共通電極、６……出力端子
。
FIG. 1a is a plan view showing an embodiment of the line sensor according to the present invention, FIG. 1b is a cross-sectional view, FIG. 2 is a diagram showing how the common electrode and output terminal are connected, and FIG. and FIG. 4 are diagrams showing conventional line sensors, respectively. DESCRIPTION OF SYMBOLS 1...Insulating substrate, 2...Individual electrode, 3...Silicon semiconductor layer, 4...Common electrode, 6...Output terminal.
Claims (1)
極と、該個別電極上に形成された光電変換部とし
て作用するシリコン半導体層と、該シリコン半導
体層上に前記個別電極と交差する方向に複数本に
分割して形成された共通電極と、該共通電極が接
続される出力端子とを備えてなり、前記複数本の
共通電極のうちの１個の共通電極を選択して前記
出力端子に接続したことを特徴とするラインセン
サ。 A large number of individual electrodes are formed in one direction on an insulating substrate, a silicon semiconductor layer is formed on the individual electrode and acts as a photoelectric conversion section, and a plurality of individual electrodes are formed on the silicon semiconductor layer in a direction crossing the individual electrodes. It comprises a common electrode formed by dividing into a book, and an output terminal to which the common electrode is connected, and one common electrode from the plurality of common electrodes is selected and connected to the output terminal. A line sensor that is characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989018549U JPH02110354U (en) | 1989-02-20 | 1989-02-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1989018549U JPH02110354U (en) | 1989-02-20 | 1989-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02110354U true JPH02110354U (en) | 1990-09-04 |
Family
ID=31233298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1989018549U Pending JPH02110354U (en) | 1989-02-20 | 1989-02-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02110354U (en) |
-
1989
- 1989-02-20 JP JP1989018549U patent/JPH02110354U/ja active Pending