JPS62104445U - - Google Patents
Info
- Publication number
- JPS62104445U JPS62104445U JP19811785U JP19811785U JPS62104445U JP S62104445 U JPS62104445 U JP S62104445U JP 19811785 U JP19811785 U JP 19811785U JP 19811785 U JP19811785 U JP 19811785U JP S62104445 U JPS62104445 U JP S62104445U
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon
- film provided
- semiconductor device
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 150000003376 silicon Chemical class 0.000 claims 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図はこの考案の一実施例を示す半導体装置
の断面図、第２図は従来の半導体装置を示す断面
図である。
図において、１は半導体基板、３は絶縁膜、４
はシリコン膜、５はシリコン酸化膜、６は導電膜
、７はシリコン酸化膜である。なお、各図中同一
符号は同一または相当部分を示すものである。
FIG. 1 is a sectional view of a semiconductor device showing an embodiment of this invention, and FIG. 2 is a sectional view of a conventional semiconductor device. In the figure, 1 is a semiconductor substrate, 3 is an insulating film, and 4 is a semiconductor substrate.
5 is a silicon film, 5 is a silicon oxide film, 6 is a conductive film, and 7 is a silicon oxide film. Note that the same reference numerals in each figure indicate the same or corresponding parts.
Claims (1)
、この絶縁膜上に設けられたシリコン膜、このシ
リコン膜上に接して設けられたシリコン窒化膜、
このシリコン窒化膜上に接して設けられたシリコ
ン酸化膜、このシリコン酸化膜上に設けられた導
電膜を備えた半導体装置。 (2) シリコン膜は浮遊ゲート電極、導電膜はゲ
ート電極であることを特徴とする特許請求の範囲
第１項記載の半導体装置。[Scope of claims for utility model registration] (1) An insulating film provided on one main surface of a semiconductor substrate, a silicon film provided on this insulating film, a silicon nitride film provided in contact with this silicon film,
A semiconductor device including a silicon oxide film provided in contact with the silicon nitride film, and a conductive film provided on the silicon oxide film. (2) The semiconductor device according to claim 1, wherein the silicon film is a floating gate electrode and the conductive film is a gate electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19811785U JPS62104445U (en) | 1985-12-23 | 1985-12-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19811785U JPS62104445U (en) | 1985-12-23 | 1985-12-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62104445U true JPS62104445U (en) | 1987-07-03 |
Family
ID=31158510
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19811785U Pending JPS62104445U (en) | 1985-12-23 | 1985-12-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62104445U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60116137A (en) * | 1983-11-29 | 1985-06-22 | Seiko Instr & Electronics Ltd | Multilayer film for semiconductor device |
| JPS60167355A (en) * | 1984-02-09 | 1985-08-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1985
- 1985-12-23 JP JP19811785U patent/JPS62104445U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60116137A (en) * | 1983-11-29 | 1985-06-22 | Seiko Instr & Electronics Ltd | Multilayer film for semiconductor device |
| JPS60167355A (en) * | 1984-02-09 | 1985-08-30 | Matsushita Electronics Corp | Manufacture of semiconductor device |
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