JPH0345661U - - Google Patents
Info
- Publication number
- JPH0345661U JPH0345661U JP10691989U JP10691989U JPH0345661U JP H0345661 U JPH0345661 U JP H0345661U JP 10691989 U JP10691989 U JP 10691989U JP 10691989 U JP10691989 U JP 10691989U JP H0345661 U JPH0345661 U JP H0345661U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- base layer
- layer
- opposite conductivity
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
第１図及び第２図は本考案の第１及び第２の実
施例の断面図、第３図は従来例の断面図である。
１……Ｎ−エピタキシヤル層、２……Ｐ型シリ
コン基板、３……酸化膜、４……ゲート電極、５
……アルミ配線、６……絶縁膜、７……Ｎ＋拡散
層（ドレイン）、８……Ｎ＋拡散層（ソース）、
９……Ｐ＋拡散層、１０……Ｐベース層、１１…
…空乏層、１２……Ｎ−ウエル層、１３……曲率
半径。
1 and 2 are sectional views of the first and second embodiments of the present invention, and FIG. 3 is a sectional view of the conventional example. DESCRIPTION OF SYMBOLS 1... N - epitaxial layer, 2... P-type silicon substrate, 3... Oxide film, 4... Gate electrode, 5
... Aluminum wiring, 6 ... Insulating film, 7 ... N + diffusion layer (drain), 8 ... N + diffusion layer (source),
9...P + diffusion layer, 10...P base layer, 11...
...depletion layer, 12...N - well layer, 13...curvature radius.
Claims (1)
純物層と、前記不純物層に形成された一導電型ベ
ース層と逆導電型ドレインと、前記ベース層に形
成された逆導電型ソースとを有する横型電界効果
トランジスタにおいて、前記半導体基板に接する
ように前記ベース層を形成したことを特徴とする
横型電界効果トランジスタ。 an impurity layer of opposite conductivity type formed on a semiconductor substrate of one conductivity type, a base layer of one conductivity type and a drain of opposite conductivity type formed on the impurity layer, and a source of opposite conductivity type formed on the base layer. A lateral field effect transistor, characterized in that the base layer is formed in contact with the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10691989U JPH0345661U (en) | 1989-09-11 | 1989-09-11 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10691989U JPH0345661U (en) | 1989-09-11 | 1989-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0345661U true JPH0345661U (en) | 1991-04-26 |
Family
ID=31655639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10691989U Pending JPH0345661U (en) | 1989-09-11 | 1989-09-11 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0345661U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007247183A (en) * | 2006-03-14 | 2007-09-27 | Sekisui House Ltd | Eaves of building |
-
1989
- 1989-09-11 JP JP10691989U patent/JPH0345661U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007247183A (en) * | 2006-03-14 | 2007-09-27 | Sekisui House Ltd | Eaves of building |
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