JPS63195760U - - Google Patents
Info
- Publication number
- JPS63195760U JPS63195760U JP8767487U JP8767487U JPS63195760U JP S63195760 U JPS63195760 U JP S63195760U JP 8767487 U JP8767487 U JP 8767487U JP 8767487 U JP8767487 U JP 8767487U JP S63195760 U JPS63195760 U JP S63195760U
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- aperture
- distance
- transistor
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図および第２図はそれぞれ本考案の一実施
例を示すオーバレイ・トランジスタ構造半導体装
置の平面図およびそのＡ−Ａ′線断面図、第３図
は本考案の他の実施例を示す半導体装置の平面図
、第４図はおよび第５図はそれぞれ従来オーバレ
イ構造トランジスタの平面図およびそのＢ−Ｂ′
線断面図である。
１……Ｎ型エピタキシヤル基板、２……Ｐ＋型
第１ベース層、３……Ｐ型第２ベース層、４……
第１の絶縁膜、５……エミツタ開孔部、６……ポ
リシリコン層、７……エミツタ層、８……第２の
絶縁膜、９……エミツタコンタクト開孔部、１０
……エミツタ電極、１１……ベースコンタクト開
孔部、１２……ベース電極。
1 and 2 are a plan view and a cross-sectional view taken along the line A-A' of an overlay transistor structure semiconductor device showing one embodiment of the present invention, respectively, and FIG. 3 is a semiconductor device showing another embodiment of the present invention. 4 and 5 are a plan view of a conventional overlay structure transistor and its B-B', respectively.
FIG. DESCRIPTION OF SYMBOLS 1...N-type epitaxial substrate, 2...P + type first base layer, 3...P-type second base layer, 4...
First insulating film, 5... Emitter opening, 6... Polysilicon layer, 7... Emitter layer, 8... Second insulating film, 9... Emitter contact opening, 10
... Emitter electrode, 11 ... Base contact opening, 12 ... Base electrode.
Claims (1)
板上に選択的にエミツタ開孔部をもつ第１の絶縁
膜を介して、不純物を含有するポリシリコン膜（
若しくは、アモルフアスシリコン膜）が形成され
、該ポリシリコン膜を拡散源としてエミツタ開孔
部直下にエミツタ層を形成し、該ポリシリコン膜
上には、選択的にエミツタコンタクト開孔部をも
つ第２の絶縁膜を介してエミツタ電極が形成され
、該エミツタ開孔部と該エミツタコンタクト開孔
部の間の該ポリシリコン膜がバラステイング抵抗
として作用し、前記エミツタ層は、複数個づつま
とめられ、トランジスタセルが複数個分散して配
置されるオーバレイ構造のバイポーラトランジス
タにおいて、前記トランジスタセル内で中央部の
エミツタ層に対するエミツタ開孔部と、エミツタ
コンタクト開孔部の距離が、端部のエミツタ層に
対するエミツタ開孔部とエミツタコンタクト開孔
部の距離より長く設定されていることを特徴とす
る半導体装置。 (2) 前記トランジスタ中央部のトランジスタセ
ル内のエミツタ層に対するエミツタ開孔部と、エ
ミツタコンタクト開孔部の距離が、トランジスタ
端部のトランジスタセル内のエミツタ層に対する
エミツタ開孔部と、エミツタコンタクト開孔部の
距離より長く設定されていることを特徴とする実
用新案登録請求の範囲第１項記載の半導体装置。[Claims for Utility Model Registration] (1) A polysilicon film containing impurities (
Alternatively, an amorphous silicon film) is formed, an emitter layer is formed directly under the emitter opening using the polysilicon film as a diffusion source, and an emitter contact opening is selectively formed on the polysilicon film. An emitter electrode is formed through a second insulating film, the polysilicon film between the emitter aperture and the emitter contact aperture acts as a ballasting resistor, and the emitter layer is formed in a plurality of layers at a time. In a bipolar transistor with an overlay structure in which a plurality of transistor cells are grouped together and arranged in a dispersed manner, the distance between the emitter aperture and the emitter contact aperture for the central emitter layer in the transistor cell is equal to A semiconductor device characterized in that the distance between the emitter aperture and the emitter contact aperture is set longer than the distance between the emitter aperture and the emitter contact aperture for the emitter layer. (2) The distance between the emitter aperture for the emitter layer in the transistor cell at the center of the transistor and the emitter contact aperture is the same as the distance between the emitter aperture for the emitter layer in the transistor cell at the transistor end and the emitter contact aperture The semiconductor device according to claim 1, wherein the distance is longer than the distance of the contact opening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8767487U JPS63195760U (en) | 1987-06-05 | 1987-06-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8767487U JPS63195760U (en) | 1987-06-05 | 1987-06-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63195760U true JPS63195760U (en) | 1988-12-16 |
Family
ID=30945099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8767487U Pending JPS63195760U (en) | 1987-06-05 | 1987-06-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63195760U (en) |
-
1987
- 1987-06-05 JP JP8767487U patent/JPS63195760U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS63195760U (en) | ||
| JPS6313352B2 (en) | ||
| JPH0671087B2 (en) | Vertical field effect transistor | |
| JPH0546268Y2 (en) | ||
| JPH0345661U (en) | ||
| JPH02113345U (en) | ||
| JPH0432754Y2 (en) | ||
| JPH02725U (en) | ||
| JPH0377463U (en) | ||
| JPH0262720U (en) | ||
| JPS62145348U (en) | ||
| JPH0365241U (en) | ||
| JPS60137450U (en) | semiconductor resistance device | |
| JPH01169048U (en) | ||
| JPH02125335U (en) | ||
| JPS63102258U (en) | ||
| JPS6424844U (en) | ||
| JPS62188156U (en) | ||
| JPH0244354U (en) | ||
| JPH0691199B2 (en) | Semiconductor integrated circuit | |
| JPS63131152U (en) | ||
| JPS6433754U (en) | ||
| JPH0175804U (en) | ||
| JPS62179150A (en) | Multicollector type lateral transistor | |
| JPS62179151A (en) | Lateral transistor |