JPH0175804U - - Google Patents
Info
- Publication number
- JPH0175804U JPH0175804U JP1987171060U JP17106087U JPH0175804U JP H0175804 U JPH0175804 U JP H0175804U JP 1987171060 U JP1987171060 U JP 1987171060U JP 17106087 U JP17106087 U JP 17106087U JP H0175804 U JPH0175804 U JP H0175804U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- light
- region
- opposite conductivity
- type region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Measurement Of Optical Distance (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Length Measuring Devices By Optical Means (AREA)
Description
第１図は本考案に係る半導体光位置検出装置の
第１の実施例を示す平面図、第２，３図は本考案
の第２の実施例を示すものであつて、第２図はそ
の平面図、第３図は第２図のＡ―Ａ線断面図、第
４，５図は従来の半導体光位置検出装置を示すも
のであつて、第４図はその平面図および第５図は
従来の半導体光位置検出装置の素子構成を示す断
面図である。
１……エピタキシヤル基板、２……Ｐ形シリコ
ン基板、３……ｎ形エピタキシヤル層、４……Ｐ
＋分離拡散領域、５……ｎ＋埋め込み層、６，６
ａ，７，７ａ……Ｐ形ベース拡散領域、８……ｎ
＋エミツタ領域、９，９ａ……Ｐ形抵抗層（反対
導電形領域）、１０，１０ａ，１１，１１ａ……
出力用金属電極、１２……バイアス用金属電極、
１３……ＳｉＯ２膜、１４……コンタクトホール
、１５……遮光膜、ＰＳＤａ１〜ａ５……検出用
検出素子、ＰＳＤｂ１〜ｂ５……ダミー用検出素
子。
FIG. 1 is a plan view showing a first embodiment of a semiconductor optical position detection device according to the present invention, and FIGS. 2 and 3 show a second embodiment of the present invention. A plan view, FIG. 3 is a sectional view taken along the line A--A in FIG. 2, and FIGS. 4 and 5 show a conventional semiconductor optical position detection device. FIG. FIG. 2 is a cross-sectional view showing the element configuration of a conventional semiconductor optical position detection device. 1...Epitaxial substrate, 2...P type silicon substrate, 3...N type epitaxial layer, 4...P
+ Separation diffusion region, 5...n + Buried layer, 6,6
a, 7, 7a...P-type base diffusion region, 8...n
+ emitter region, 9, 9a...P type resistance layer (opposite conductivity type region), 10, 10a, 11, 11a...
Output metal electrode, 12... Bias metal electrode,
13... SiO2 film, 14...Contact hole, 15...Light shielding film, PSDa1 - a5 ...Detection element for detection, PSDb1 - b5 ...Dummy detection element.
Claims (1)
形領域と光が遮光される反対導電形領域とを形成
し、上記光が照射される反対導電形領域の出力信
号から光が遮光される反対導電形領域の出力信号
を減算しリーク電流を補償して光位置を検出する
半導体光位置検出装置において、 前記光が照射される反対導電形領域と遮光され
る反対導電形領域を交互に複数配置するとともに
、それぞれの領域を並列接続したことを特徴とす
る半導体光位置検出装置。[Claims for Utility Model Registration] One conductivity type semiconductor region is formed with an opposite conductivity type region to which light is irradiated and an opposite conductivity type region to which light is blocked, and the output of the opposite conductivity type region to which the light is irradiated. In a semiconductor optical position detection device that detects a light position by subtracting an output signal of an opposite conductivity type region where light is shielded from a signal and compensating for leakage current, A semiconductor optical position detection device characterized in that a plurality of conductive regions are arranged alternately and each region is connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17106087U JPH0543365Y2 (en) | 1987-11-09 | 1987-11-09 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17106087U JPH0543365Y2 (en) | 1987-11-09 | 1987-11-09 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0175804U true JPH0175804U (en) | 1989-05-23 |
| JPH0543365Y2 JPH0543365Y2 (en) | 1993-11-01 |
Family
ID=31462547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17106087U Expired - Lifetime JPH0543365Y2 (en) | 1987-11-09 | 1987-11-09 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0543365Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044403A (en) * | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | Semiconductor image pickup device |
-
1987
- 1987-11-09 JP JP17106087U patent/JPH0543365Y2/ja not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001044403A (en) * | 1999-07-30 | 2001-02-16 | Fujitsu Ltd | Semiconductor image pickup device |
| JP4622009B2 (en) * | 1999-07-30 | 2011-02-02 | 富士通株式会社 | Semiconductor imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0543365Y2 (en) | 1993-11-01 |
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