JPH0365241U - - Google Patents
Info
- Publication number
- JPH0365241U JPH0365241U JP12587089U JP12587089U JPH0365241U JP H0365241 U JPH0365241 U JP H0365241U JP 12587089 U JP12587089 U JP 12587089U JP 12587089 U JP12587089 U JP 12587089U JP H0365241 U JPH0365241 U JP H0365241U
- Authority
- JP
- Japan
- Prior art keywords
- region
- sides
- element isolation
- collector
- emitter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002955 isolation Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図は、本考案のラテラルＰＮＰトランジス
タの表面付近の構造を示す平面図、第２図は、第
１図のＡ−Ａ線断面図である。第３図は、従来の
ラテラルＰＮＰトランジスタの表面付近の構造を
示す平面図、第４図は、第３図のＡ−Ａ線断面図
である。第５図は、本考案のラテラルＰＮＰトラ
ンジスタと従来のラテラルＰＮＰトランジスタと
の電気的特性を比較する説明図である。
１……Ｐ型不純物素子分離領域、２……Ｎ型不
純物拡散領域（ベース領域）、３……Ｐ型不純物
拡散領域（コレクタ領域）、４……Ｐ型不純物拡
散領域（エミツタ領域）、５……Ｎ型エピタキシ
ヤル領域、６……Ｐ型半導体基板。
FIG. 1 is a plan view showing the structure near the surface of a lateral PNP transistor of the present invention, and FIG. 2 is a cross-sectional view taken along the line A--A in FIG. FIG. 3 is a plan view showing the structure near the surface of a conventional lateral PNP transistor, and FIG. 4 is a cross-sectional view taken along the line AA in FIG. 3. FIG. 5 is an explanatory diagram comparing the electrical characteristics of the lateral PNP transistor of the present invention and a conventional lateral PNP transistor. 1... P-type impurity element isolation region, 2... N-type impurity diffusion region (base region), 3... P-type impurity diffusion region (collector region), 4... P-type impurity diffusion region (emitter region), 5 ...N-type epitaxial region, 6...P-type semiconductor substrate.
Claims (1)
不純物添加層から成り、該コレクタ領域が、該エ
ミツタ領域の四辺を取り囲む様に配置されると共
に該エミツタ領域およびコレクタ領域の辺が外周
の素子分離領域の辺に対して４５°の角度をもつ
て配置されるラテラル型トランジスタにおいて、
ベース領域が矩形の不純物添加層から成り、該ベ
ース領域は、前記素子分離領域と前記素子分離領
域に対向するコレクタ領域との間に、該ベース領
域の辺が前記素子分離領域の辺に対して４５°の
角度になるように配置されることを特徴とする半
導体装置。 The emitter region and the collector region each consist of a rectangular impurity-doped layer, and the collector region is arranged so as to surround the four sides of the emitter region, and the sides of the emitter region and the collector region are on the sides of the outer element isolation region. In a lateral type transistor arranged at an angle of 45° to
The base region is composed of a rectangular impurity-doped layer, and the base region is located between the element isolation region and a collector region opposite to the element isolation region, with the sides of the base region facing the sides of the element isolation region. A semiconductor device characterized in that it is arranged at an angle of 45°.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12587089U JPH0365241U (en) | 1989-10-27 | 1989-10-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12587089U JPH0365241U (en) | 1989-10-27 | 1989-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0365241U true JPH0365241U (en) | 1991-06-25 |
Family
ID=31673721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12587089U Pending JPH0365241U (en) | 1989-10-27 | 1989-10-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0365241U (en) |
-
1989
- 1989-10-27 JP JP12587089U patent/JPH0365241U/ja active Pending
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