JPH0244354U - - Google Patents
Info
- Publication number
- JPH0244354U JPH0244354U JP12269888U JP12269888U JPH0244354U JP H0244354 U JPH0244354 U JP H0244354U JP 12269888 U JP12269888 U JP 12269888U JP 12269888 U JP12269888 U JP 12269888U JP H0244354 U JPH0244354 U JP H0244354U
- Authority
- JP
- Japan
- Prior art keywords
- region
- base region
- emitter
- semiconductor device
- pnp transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図はこの考案の半導体装置の一実施例を示
す平面図および断面図、第２図はラテラルＰＮＰ
トランジスタ構造のＰＮダイオードの回路図、第
３図はラテラルＰＮＰトランジスタ構造のＰＮダ
イオードの従来例を示す平面図および断面図、第
４図は従来の改良ＰＮダイオードを示す平面図お
よび断面図、第５図は従来の改良ＰＮダイオード
の問題点を説明するための断面図である。
２１……Ｐ型シリコン基板、２３……エピタキ
シヤル層、２３ａ……ベース領域、２５……コレ
クタ領域、２６……エミツタ領域、２７……Ｎ＋
チヤンネルストツプ領域、３２……エミツタ電極
配線。
FIG. 1 is a plan view and a sectional view showing an embodiment of the semiconductor device of this invention, and FIG. 2 is a lateral PNP.
A circuit diagram of a PN diode with a transistor structure; FIG. 3 is a plan view and a sectional view showing a conventional example of a PN diode with a lateral PNP transistor structure; FIG. 4 is a plan view and a sectional view showing a conventional improved PN diode; The figure is a cross-sectional view for explaining the problems of the conventional improved PN diode. 21...P-type silicon substrate, 23...Epitaxial layer, 23a...Base region, 25...Collector region, 26...Emitter region, 27...N +
Channel stop area, 32... Emitter electrode wiring.
Claims (1)
ジスタのコレクタ領域とベース領域を短絡してＰ
Ｎダイオードを構成する半導体装置において、 (a) ラテラルＰＮＰトランジスタのベース領域
内に、エミツタ領域を囲むように、ベース領域と
同一導電型の高濃度のチヤンネルストツプ領域を
設け、さらに、 (b) エミツタ領域から半導体基体表面に引出さ
れるエミツタ電極配線を、前記ベース領域上を覆
つて設けることを特徴とする半導体装置。[Claims for Utility Model Registration] By shorting the collector region and base region of a lateral PNP transistor formed on a semiconductor substrate,
In a semiconductor device constituting an N diode, (a) a highly doped channel stop region of the same conductivity type as the base region is provided in the base region of the lateral PNP transistor so as to surround the emitter region, and (b) A semiconductor device characterized in that an emitter electrode wiring drawn out from an emitter region to a surface of a semiconductor substrate is provided to cover the base region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12269888U JPH0244354U (en) | 1988-09-21 | 1988-09-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12269888U JPH0244354U (en) | 1988-09-21 | 1988-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0244354U true JPH0244354U (en) | 1990-03-27 |
Family
ID=31370871
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12269888U Pending JPH0244354U (en) | 1988-09-21 | 1988-09-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0244354U (en) |
-
1988
- 1988-09-21 JP JP12269888U patent/JPH0244354U/ja active Pending
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