JPS6242255U - - Google Patents
Info
- Publication number
- JPS6242255U JPS6242255U JP12634286U JP12634286U JPS6242255U JP S6242255 U JPS6242255 U JP S6242255U JP 12634286 U JP12634286 U JP 12634286U JP 12634286 U JP12634286 U JP 12634286U JP S6242255 U JPS6242255 U JP S6242255U
- Authority
- JP
- Japan
- Prior art keywords
- collector
- region
- junction
- base
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
第１図Ａ〜Ｇは本考案の一実施例装置を得るた
めの製造工程順の断面図、第２図は第１図ＧのＧ
―Ｇ線断面図、第３図は第１図Ｇの一部拡大図で
あつてコレクタ内空乏層の電位状態を示す図であ
る。
主要部分の符号の説明、３……Ｐ型ゲート領域
、４……コレクタ領域、５……ベース領域、６…
…エメツタ領域。
FIGS. 1A to 1G are cross-sectional views of the manufacturing process for obtaining an embodiment of the device of the present invention, and FIG. 2 is a cross-sectional view of FIG.
3 is a partially enlarged view of FIG. 1G, showing the potential state of the depletion layer in the collector. Explanation of symbols of main parts, 3...P-type gate region, 4...Collector region, 5...Base region, 6...
...Emetsuta area.
Claims (1)
の低濃度コレクタ領域中に設けられ前記ベース・
コレクタ接合部を覆つて前記コレクタ領域中に延
在した空乏層内の電位の傾きを制御するゲート領
域を有し、前記ゲート領域はベースバイアスと同
電位であり、前記コレクタ領域と逆導電型の不鈍
物領域であつて、このゲート領域と前記コレクタ
領域とのなすＰＭ接合に逆バイアスを印加してこ
のＰＮ接合から前記コレクタ領域へ延びる空乏層
と前記ベース・コレクタ接合部から前記コレクタ
領域へ延びる空乏層とが互いに連結すると共に、
前記ゲート領域間のコレクタ領域がすべて空乏層
化してなることを特徴とするトランジスタ。 The base collector is provided in the lightly doped collector region between the base collector junction and the collector electrode.
a gate region for controlling the gradient of potential in a depletion layer extending over the collector junction and into the collector region, the gate region being at the same potential as the base bias and having a conductivity type opposite to that of the collector region; A depletion layer extending from the PN junction to the collector region and a depletion layer extending from the base-collector junction to the collector region by applying a reverse bias to the PM junction formed by the gate region and the collector region, which is an inert region. The extending depletion layers are connected to each other, and
A transistor characterized in that a collector region between the gate regions is entirely depleted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12634286U JPS6242255U (en) | 1986-08-19 | 1986-08-19 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12634286U JPS6242255U (en) | 1986-08-19 | 1986-08-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6242255U true JPS6242255U (en) | 1987-03-13 |
Family
ID=31020058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12634286U Pending JPS6242255U (en) | 1986-08-19 | 1986-08-19 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6242255U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49115676A (en) * | 1973-03-07 | 1974-11-05 | ||
| JPS49124984A (en) * | 1973-04-02 | 1974-11-29 | ||
| JPS5436189A (en) * | 1977-08-26 | 1979-03-16 | Mitsubishi Electric Corp | Semiconductor device |
-
1986
- 1986-08-19 JP JP12634286U patent/JPS6242255U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49115676A (en) * | 1973-03-07 | 1974-11-05 | ||
| JPS49124984A (en) * | 1973-04-02 | 1974-11-29 | ||
| JPS5436189A (en) * | 1977-08-26 | 1979-03-16 | Mitsubishi Electric Corp | Semiconductor device |