JPS6424862U - - Google Patents
Info
- Publication number
- JPS6424862U JPS6424862U JP12032487U JP12032487U JPS6424862U JP S6424862 U JPS6424862 U JP S6424862U JP 12032487 U JP12032487 U JP 12032487U JP 12032487 U JP12032487 U JP 12032487U JP S6424862 U JPS6424862 U JP S6424862U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- region
- semiconductor substrate
- element formation
- opposite conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 4
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
第1図は本考案の一実施例の断面模式図、第2
図は第1図の回路の等価回路図、第3図は従来の
集積回路の一例の断面模式図、第4図は第3図の
等価回路図である。
1……p形半導体基板、2……埋込層、3……
n形エピタキシヤル領域、4……分離領域、5…
…ドレイン領域、6B……ベース領域、6E……
エミツタ領域、R……拡散抵抗体、T……nPn
トランジスタ。
Figure 1 is a schematic cross-sectional view of one embodiment of the present invention;
1 is an equivalent circuit diagram of the circuit shown in FIG. 1, FIG. 3 is a schematic sectional view of an example of a conventional integrated circuit, and FIG. 4 is an equivalent circuit diagram of the circuit shown in FIG. 1...p-type semiconductor substrate, 2...buried layer, 3...
n-type epitaxial region, 4... isolation region, 5...
...Drain region, 6B...Base region, 6E...
Emitter region, R...diffused resistor, T...nPn
transistor.
Claims (1)
設けられた逆導電形の素子形成領域を囲む分離領
域、 (B) 前記逆導電形素子形成領域に選択的に設け
られた一導電形ベース領域と、該ベース領域に設
けられたエミツタ形領域と、前記ベース領域に対
応して前記半導体基板上に埋込まれた逆導電形の
埋込層とを有するバイポーラ・トランジスタ、 (C) 前記逆導電形素子形成領域内の他の領域に
設けられた一導電形の拡散抵抗体、 (D) 前記バイポーラ・トランジスタの領域と前
記一導電形の拡散抵抗体の領域との中間の位置で
、かつ前記一導電形半導体基板の上面から前記逆
導電形の素子形成領域の途中まで突出る一導電形
のドレイン領域、 を含むことを特徴とする集積回路。[Claims for Utility Model Registration] (A) An isolation region surrounding an opposite conductivity type element formation region selectively provided on one principal surface of a one conductivity type semiconductor substrate; (B) Said opposite conductivity type element formation region. a base region of one conductivity type selectively provided in the base region, an emitter-type region provided in the base region, and a buried layer of the opposite conductivity type buried on the semiconductor substrate corresponding to the base region; (C) a diffused resistor of one conductivity type provided in another region within the opposite conductivity type element formation region; (D) a region of the bipolar transistor and the diffused resistor of one conductivity type; an integrated circuit comprising: a drain region of one conductivity type that is located at an intermediate position between the semiconductor substrate of one conductivity type and the upper surface of the semiconductor substrate of one conductivity type and protrudes halfway into the element formation region of the opposite conductivity type.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12032487U JPH0525234Y2 (en) | 1987-08-04 | 1987-08-04 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12032487U JPH0525234Y2 (en) | 1987-08-04 | 1987-08-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6424862U true JPS6424862U (en) | 1989-02-10 |
JPH0525234Y2 JPH0525234Y2 (en) | 1993-06-25 |
Family
ID=31366328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12032487U Expired - Lifetime JPH0525234Y2 (en) | 1987-08-04 | 1987-08-04 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0525234Y2 (en) |
-
1987
- 1987-08-04 JP JP12032487U patent/JPH0525234Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0525234Y2 (en) | 1993-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB1330790A (en) | Semiconductor devices | |
JPS6424862U (en) | ||
JPS61162066U (en) | ||
JPH0263556U (en) | ||
JPH0244354U (en) | ||
JPH0282034U (en) | ||
JPS6411557U (en) | ||
JPS62116565U (en) | ||
JPH01169048U (en) | ||
JPS63105360U (en) | ||
JPS648737U (en) | ||
JPS63177066U (en) | ||
JPS6237942U (en) | ||
JPH0415235U (en) | ||
JPH0263555U (en) | ||
JPS61164053U (en) | ||
JPS6268252U (en) | ||
JPH02725U (en) | ||
JPH02125335U (en) | ||
JPH0165152U (en) | ||
JPS62145348U (en) | ||
JPH02122455U (en) | ||
JPH0365241U (en) | ||
JPS59131156U (en) | semiconductor integrated circuit | |
JPS6333635U (en) |