JPS6237942U - - Google Patents
Info
- Publication number
- JPS6237942U JPS6237942U JP12902885U JP12902885U JPS6237942U JP S6237942 U JPS6237942 U JP S6237942U JP 12902885 U JP12902885 U JP 12902885U JP 12902885 U JP12902885 U JP 12902885U JP S6237942 U JPS6237942 U JP S6237942U
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- semiconductor substrate
- conductivity type
- same conductivity
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 2
- 238000005192 partition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Description
第１図はこの考案の一実施例を示す横成概略図
、第２図は集積回路１内に組み込まれるツエナー
ダイオードの構成を示す縦断面図、第３図は第２
図に示すツエナーダイオードのツエナー電圧と時
間との関係を示す図、第４図は第２図に示すツエ
ナーダイオードのツエナー電圧と温度との関係を
示す図である。
１…集積回路、１０…半導体基板、１１…埋め
込み拡散層、１２…エピタキシヤル層、１２ａ…
島状領域、１３…分離拡散領域、１４，１５…貫
通拡散領域、１６…不純物拡散領域、１７…Ｐ―
Ｎ接合部。
FIG. 1 is a horizontal schematic diagram showing one embodiment of this invention, FIG. 2 is a vertical cross-sectional view showing the configuration of a Zener diode incorporated in an integrated circuit 1, and FIG.
FIG. 4 is a diagram showing the relationship between the Zener voltage of the Zener diode shown in FIG. 2 and time, and FIG. 4 is a diagram showing the relationship between the Zener voltage of the Zener diode shown in FIG. 2 and temperature. DESCRIPTION OF SYMBOLS 1... Integrated circuit, 10... Semiconductor substrate, 11... Buried diffusion layer, 12... Epitaxial layer, 12a...
Island-shaped region, 13... Isolation diffusion region, 14, 15... Penetrating diffusion region, 16... Impurity diffusion region, 17... P-
N junction.
Claims (1)
体基板の表面に成長され、かつ前記半導体基板と
逆の導電型のエピタキシヤル層と、前記半導体基
板とエピタキシヤル層との間に埋め込まれ、かつ
当該エピタキシヤル層と同一導電型でしかも高濃
度な埋め込み拡散層と、前記エピタキシヤル層を
島状に区画するように形成され、かつ前記半導体
基板と同一導電型の分離拡散領域と、前記島状に
区画されたエピタキシヤル層内に前記埋め込み拡
散層まで達する深さに拡散されてなり、かつ当該
エピタキシヤル層と同一導電型でしかも高濃度な
二つの貫通拡散領域と、この貫通拡散領域の一方
の表面に重なり、当該貫通拡散領域よりも幅広く
しかも浅く形成され、かつ前記半導体基板と同一
導電型でしかも高濃度な不純物拡散領域とを備え
たツエナーダイオードをセンサ部とし、このセン
サ部を集積回路内に組み込んだことを特徴とする
温度計。 a semiconductor substrate of one conductivity type, an epitaxial layer grown on the surface of the semiconductor substrate and of an opposite conductivity type to the semiconductor substrate, and an epitaxial layer embedded between the semiconductor substrate and the epitaxial layer; a buried diffusion layer having the same conductivity type as the epitaxial layer and having a high concentration; a separated diffusion region formed to partition the epitaxial layer into islands and having the same conductivity type as the semiconductor substrate; Two through diffusion regions are diffused in the divided epitaxial layer to a depth reaching the buried diffusion layer, and are of the same conductivity type as the epitaxial layer and have a high concentration, and one of the through diffusion regions. A Zener diode having an impurity diffusion region overlapping the surface, wider and shallower than the through-diffusion region, having the same conductivity type as the semiconductor substrate and having a high concentration is used as a sensor part, and this sensor part is used in an integrated circuit. A thermometer characterized by having a built-in.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12902885U JPS6237942U (en) | 1985-08-24 | 1985-08-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12902885U JPS6237942U (en) | 1985-08-24 | 1985-08-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6237942U true JPS6237942U (en) | 1987-03-06 |
Family
ID=31025234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12902885U Pending JPS6237942U (en) | 1985-08-24 | 1985-08-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6237942U (en) |
-
1985
- 1985-08-24 JP JP12902885U patent/JPS6237942U/ja active Pending