JPS62116565U - - Google Patents
Info
- Publication number
- JPS62116565U JPS62116565U JP338086U JP338086U JPS62116565U JP S62116565 U JPS62116565 U JP S62116565U JP 338086 U JP338086 U JP 338086U JP 338086 U JP338086 U JP 338086U JP S62116565 U JPS62116565 U JP S62116565U
- Authority
- JP
- Japan
- Prior art keywords
- buried layer
- conductivity type
- transistor
- region
- island
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 101000684181 Homo sapiens Selenoprotein P Proteins 0.000 description 1
- 102100023843 Selenoprotein P Human genes 0.000 description 1
- 229940119265 sepp Drugs 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Description
第１乃至第３図はそれぞれ本発明を説明するた
めの断面図、平面図、回路図、第４乃至第６図は
それぞれ従来のＳＥＰＰ回路を説明するための回
路図、断面図、平面図である。
Ｑ１，Ｑ２はＮＰＮ型トランジスタ、Ｒ１，Ｒ
２はエミツタ抵抗、Ｒ３は寄生抵抗、Ｄは寄生ダ
イオード、１１は半導体基板、１６はベース領域
、１７は抵抗領域、１８はエミツタ領域、２１，
２２，２３，２４は電極、３０，３１は夫々第１
、第２の埋込層である。
1 to 3 are a sectional view, a plan view, and a circuit diagram for explaining the present invention, respectively, and FIGS. 4 to 6 are a circuit diagram, a sectional view, and a plan view for explaining a conventional SEPP circuit, respectively. be. Q 1 and Q 2 are NPN transistors, R 1 and R
2 is an emitter resistance, R 3 is a parasitic resistance, D is a parasitic diode, 11 is a semiconductor substrate, 16 is a base region, 17 is a resistance region, 18 is an emitter region, 21,
22, 23, 24 are electrodes, 30, 31 are first electrodes, respectively.
, the second embedded layer.
Claims (1)
埋込層と、前記基板全面に形成した逆導電型のエ
ピタキシヤル層と、前記埋込層を取り囲むように
前記エピタキシヤル層を貫通した一導電型の分離
領域により島状に分離した島領域と、該島領域表
面に形成したベース、エミツタ、コレクタより構
成されるトランジスタと、同じく前記島領域表面
に形成した一導電型の抵抗領域とを具備し、前記
１つのトランジスタと前記１つの抵抗体とを前記
同一島領域に形成し且つ前記トランジスタのコレ
クタが外部接続端子に接続される半導体集積回路
装置において、前記埋込層は、前記トランジスタ
直下に設けた第１の埋込層と前記抵抗領域直下に
設けた第２の埋込層とから成ることを特徴とする
半導体集積回路装置。 A buried layer of an opposite conductivity type formed on the surface of a semiconductor substrate of one conductivity type, an epitaxial layer of an opposite conductivity type formed on the entire surface of the substrate, and a buried layer of one conductivity type penetrating the epitaxial layer so as to surround the buried layer. The semiconductor device includes an island region separated into island shapes by a mold separation region, a transistor formed on the surface of the island region including a base, an emitter, and a collector, and a resistance region of one conductivity type also formed on the surface of the island region. In the semiconductor integrated circuit device in which the one transistor and the one resistor are formed in the same island region and the collector of the transistor is connected to an external connection terminal, the buried layer is located directly below the transistor. A semiconductor integrated circuit device comprising a first buried layer provided and a second buried layer provided directly below the resistance region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP338086U JPS62116565U (en) | 1986-01-14 | 1986-01-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP338086U JPS62116565U (en) | 1986-01-14 | 1986-01-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62116565U true JPS62116565U (en) | 1987-07-24 |
Family
ID=30783082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP338086U Pending JPS62116565U (en) | 1986-01-14 | 1986-01-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62116565U (en) |
-
1986
- 1986-01-14 JP JP338086U patent/JPS62116565U/ja active Pending
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