JPS63177066U - - Google Patents
Info
- Publication number
- JPS63177066U JPS63177066U JP6858287U JP6858287U JPS63177066U JP S63177066 U JPS63177066 U JP S63177066U JP 6858287 U JP6858287 U JP 6858287U JP 6858287 U JP6858287 U JP 6858287U JP S63177066 U JPS63177066 U JP S63177066U
- Authority
- JP
- Japan
- Prior art keywords
- type
- base region
- region
- selectively provided
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Description
第１図は本考案の一実施例の主要部を示す半導
体チツプの断面図、第２図ａ，ｂは本考案の一実
施例の製造方法を説明するための工程順に配置し
た半導体チツプの断面図、第３図は従来例の主要
部を示す半導体チツプの断面図、第４図は従来例
と本考案の一実施例のコレクタ電流Ｉｃとコレク
タ・エミツタ間電圧ＶＣＥの関係を示す特性図で
ある。
１，２０１……Ｐ型半導体基体、２，２０２…
…Ｎ＋埋込層、３，２０３……Ｐ＋型埋込層、４
，２０４……Ｎ型エピタキシヤル層、５，２０５
……Ｐ型第１コレクタ領域、６，２０６……第２
コレクタ領域、７……第１のベース領域、８……
第２のベース領域、９……エミツタ領域、１０，
２１０……Ｎ＋型ベースコンタクト領域、１１，
２１１……酸化シリコン膜、１２，２１２……エ
ミツタ電極、１３，２１３……ベース電極、１４
，２１４……コレクタ電極、２０７……Ｎ型ベー
ス領域、２０９……Ｐ＋型エミツタ領域、２０９
′……Ｐ＋型コレクタコンタクト領域。
FIG. 1 is a cross-sectional view of a semiconductor chip showing the main parts of an embodiment of the present invention, and FIGS. 2 a and b are cross-sections of the semiconductor chip arranged in the order of steps to explain the manufacturing method of an embodiment of the present invention. 3 is a sectional view of a semiconductor chip showing the main parts of the conventional example, and FIG. 4 is a characteristic diagram showing the relationship between collector current Ic and collector-emitter voltage VCE of the conventional example and an embodiment of the present invention. be. 1,201...P-type semiconductor substrate, 2,202...
...N + type buried layer, 3,203...P + type buried layer, 4
, 204... N-type epitaxial layer, 5, 205
...P-type first collector region, 6,206...second
Collector area, 7... First base area, 8...
second base region, 9...emitter region, 10,
210...N + type base contact region, 11,
211... Silicon oxide film, 12, 212... Emitter electrode, 13, 213... Base electrode, 14
, 214...Collector electrode, 207...N type base region, 209...P + type emitter region, 209
'...P + type collector contact region.
Claims (1)
ベース領域と、前記第１のベース領域に選択的に
設けられたＰ型のエミツタ領域と、前記エミツタ
領域の周囲を環状に取囲んで前記第１のベース領
域内に選択的に設けられ前記第１のベース領域よ
り濃度の高いＮ型の第２のベース領域とを含んで
なることを特徴とする縦型ＰＮＰトランジスタ。 an N-type first base region selectively provided on the semiconductor substrate; a P-type emitter region selectively provided in the first base region; and an annular ring surrounding the emitter region. A vertical PNP transistor comprising: a second N-type base region selectively provided within the first base region and having a higher concentration than the first base region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6858287U JPS63177066U (en) | 1987-05-07 | 1987-05-07 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6858287U JPS63177066U (en) | 1987-05-07 | 1987-05-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63177066U true JPS63177066U (en) | 1988-11-16 |
Family
ID=30908530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6858287U Pending JPS63177066U (en) | 1987-05-07 | 1987-05-07 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63177066U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60247968A (en) * | 1984-05-23 | 1985-12-07 | Nec Corp | Semiconductor device |
| JPS6167959A (en) * | 1984-09-11 | 1986-04-08 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-05-07 JP JP6858287U patent/JPS63177066U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60247968A (en) * | 1984-05-23 | 1985-12-07 | Nec Corp | Semiconductor device |
| JPS6167959A (en) * | 1984-09-11 | 1986-04-08 | Nec Corp | Manufacture of semiconductor device |
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