JPS63132460U - - Google Patents
Info
- Publication number
- JPS63132460U JPS63132460U JP2458087U JP2458087U JPS63132460U JP S63132460 U JPS63132460 U JP S63132460U JP 2458087 U JP2458087 U JP 2458087U JP 2458087 U JP2458087 U JP 2458087U JP S63132460 U JPS63132460 U JP S63132460U
- Authority
- JP
- Japan
- Prior art keywords
- silicon film
- optical sensor
- insulating substrate
- soi optical
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 230000000694 effects Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 1
Description
第１図ないし第４図はこの考案のＳＯＩ光セン
サの１実施例を示し、第１図は断面図、第２図ａ
〜ｃはそれぞれ製造途中における異なる状態の断
面図、第３図はシリコン膜の深さ方向へのキヤリ
ア濃度の分布図、第４図は相対感度特性図、第５
図および第６図はそれぞれ従来例のシリコン膜の
深さ方向へのキヤリア濃度の分布図および相対感
度特性図である。
１…絶縁基板、２…単結晶シリコン膜、３…高
不純物濃度層、５…ｐｎ接合。
Figures 1 to 4 show one embodiment of the SOI optical sensor of this invention, where Figure 1 is a sectional view and Figure 2 a.
~c are cross-sectional views of different states during manufacturing, Figure 3 is a carrier concentration distribution diagram in the depth direction of the silicon film, Figure 4 is a relative sensitivity characteristic diagram, and Figure 5 is a diagram of relative sensitivity characteristics.
6 and 6 are a carrier concentration distribution diagram and a relative sensitivity characteristic diagram in the depth direction of a conventional silicon film, respectively. DESCRIPTION OF SYMBOLS 1... Insulating substrate, 2... Single crystal silicon film, 3... High impurity concentration layer, 5... Pn junction.
Claims (1)
シリコン膜に光電効果を有するｐｎ接合を形成し
たＳＯＩ光センサにおいて、 前記シリコン膜の前記絶縁基板との界面側に高
不純物濃度層を形成したＳＯＩ光センサ。[Claims for Utility Model Registration] In an SOI optical sensor in which a single crystal silicon film is formed on an insulating substrate and a pn junction having a photoelectric effect is formed in the silicon film, on the interface side of the silicon film with the insulating substrate. SOI optical sensor with a high impurity concentration layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2458087U JPS63132460U (en) | 1987-02-20 | 1987-02-20 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2458087U JPS63132460U (en) | 1987-02-20 | 1987-02-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63132460U true JPS63132460U (en) | 1988-08-30 |
Family
ID=30823945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2458087U Pending JPS63132460U (en) | 1987-02-20 | 1987-02-20 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63132460U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06350122A (en) * | 1993-06-08 | 1994-12-22 | Hamamatsu Photonics Kk | Semiconductor light detecting element |
-
1987
- 1987-02-20 JP JP2458087U patent/JPS63132460U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06350122A (en) * | 1993-06-08 | 1994-12-22 | Hamamatsu Photonics Kk | Semiconductor light detecting element |
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