JPH0741168Y2 - Semiconductor light receiving element - Google Patents
Semiconductor light receiving elementInfo
- Publication number
- JPH0741168Y2 JPH0741168Y2 JP1988119352U JP11935288U JPH0741168Y2 JP H0741168 Y2 JPH0741168 Y2 JP H0741168Y2 JP 1988119352 U JP1988119352 U JP 1988119352U JP 11935288 U JP11935288 U JP 11935288U JP H0741168 Y2 JPH0741168 Y2 JP H0741168Y2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffusion layer
- diffusion
- epitaxial layer
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【考案の詳細な説明】 〔産業上の利用分野〕 本考案は半導体受光素子に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a semiconductor light receiving element.
第４図は従来の半導体受光素子の構造の一例を示す。 FIG. 4 shows an example of the structure of a conventional semiconductor light receiving element.
図において１はＰ型基板層、２はＮエピタキシャル層、
３はＰアイソレーション拡散層、４はＰ拡散層、５は金
属配線のコンタクト層のN+拡散層である。In the figure, 1 is a P-type substrate layer, 2 is an N epitaxial layer,
Reference numeral 3 is a P isolation diffusion layer, 4 is a P diffusion layer, and 5 is an N + diffusion layer of a contact layer for metal wiring.
Ｐ型基板層１上にエピタキシャル成長でＮエピタキシャ
ル層２を形成し、Ｐアイソレーション拡散層３で分離
し、分離した領域の金属配線のコンタクト層５を除く部
分に浅いＰ拡散層４を設け、表面からの入射光に対し、
Ｐ拡散層４とＮエピタキシャル層２が形成するPN接合面
及びＮエピタキシャル層２とＰ型基板層１が形成するPN
接合面で生ずる光電効果を利用する構造である。The N epitaxial layer 2 is formed by epitaxial growth on the P type substrate layer 1, separated by the P isolation diffusion layer 3, and the shallow P diffusion layer 4 is provided on the separated region except the contact layer 5 of the metal wiring. For incident light from
PN junction surface formed by P diffusion layer 4 and N epitaxial layer 2 and PN formed by N epitaxial layer 2 and P type substrate layer 1
This is a structure that utilizes the photoelectric effect generated at the bonding surface.
従来の半導体受光素子は、上記のように入射光に対して
PN接合面が垂直で、光が通過するPN接合部分の距離が短
く、光電効果の効率が充分に生かされていないという問
題があった。The conventional semiconductor light receiving element is
There is a problem that the PN junction surface is vertical, the distance of the PN junction portion through which light passes is short, and the photoelectric effect efficiency is not fully utilized.
本考案は上記の問題を解消するためになされたもので、
光電効果の効率が充分に生かされたものを提供すること
を目的とする。The present invention has been made to solve the above problems,
It is an object of the present invention to provide a device in which the efficiency of photoelectric effect is fully utilized.
本考案は上記目的を達成するため、Ｐ型基板上のＮエピ
タキシャル層をＰアイソレーション拡散層で分離し、該
分離されたＮエピタキシャル層内にＰ型領域を形成して
なる半導体受光素子において、前記Ｐ型領域が、前記Ｐ
型基板から、前記エピタキシャル層内に延出する複数の
Ｐ埋込層と、前記エピタキシャル層表面から、前記埋込
層の間の前記エピタキシャル層内に延出する第１のＰ拡
散層と、前記エピタキシャル層表面で、複数の前記Ｐ拡
散層を接続する第２のＰ拡散層と、該第２の拡散層と前
記Ｐ型基板とを接続する第３のＰ拡散層とを備えたこと
を特徴とするものである。In order to achieve the above object, the present invention provides a semiconductor light receiving device in which an N epitaxial layer on a P type substrate is separated by a P isolation diffusion layer and a P type region is formed in the separated N epitaxial layer. The P-type region is the P
A plurality of P buried layers extending from the mold substrate into the epitaxial layer; a first P diffusion layer extending from the surface of the epitaxial layer into the epitaxial layer between the buried layers; On the surface of the epitaxial layer, a second P diffusion layer connecting the plurality of P diffusion layers and a third P diffusion layer connecting the second diffusion layer and the P-type substrate are provided. It is what
第１図は本考案の一実施例の構造を、第２図は第１図の
実施例の各領域のパターンを示す。FIG. 1 shows the structure of one embodiment of the present invention, and FIG. 2 shows the pattern of each region of the embodiment of FIG.
図において1,2,3,4,5は第４図の同一符号と同一または
相当する部分を示し、６は小型の島状のＰ埋込層、７は
Ｎ埋込層、８は小型の島状の深いＰ拡散層である。In the figure, 1, 2, 3, 4, and 5 indicate the same or corresponding portions as those in FIG. 4, 6 is a small island-shaped P buried layer, 7 is an N buried layer, and 8 is a small It is an island-shaped deep P diffusion layer.
Ｐ型基板層１上に複数個の小型の島状のＰ埋込層６と寄
生抵抗を下げるためのN+埋込層７を設け、Ｐ型基板層１
上にＮエピタキシャル層２を成長させ、Ｎエピタキシャ
ル層２にＰアイソレーション拡散層３の形成と同時にＰ
埋込層６と接しない複数個の小型の島状の深いＰ拡散層
８を設け、さらに、従来のもののＰ拡散層４に相当する
浅いＰ拡散層を設け、このＰ拡散層４で全ての深いＰ拡
散層８を接続する。Ｐ拡散層４とＰ型基板層１を接続す
るＰ拡散層９も、Ｐ埋込層６及びＰ拡散層８と同時に形
成する。第２図においてＰ拡散層９は、Ｐアイソレーシ
ョン拡散層３と一体となった構造となっている。このよ
うに形成されたＰ拡散層４、８、９及びＰ埋込層６とＮ
エピタキシャル層２とで形成するPN接合面で、表面から
入射した光が光電変換される。A plurality of small island-shaped P buried layers 6 and an N + buried layer 7 for reducing parasitic resistance are provided on the P type substrate layer 1.
An N epitaxial layer 2 is grown on the N epitaxial layer 2, and a P isolation diffusion layer 3 is formed on the N epitaxial layer 2 at the same time as P
A plurality of small island-shaped deep P diffusion layers 8 that are not in contact with the buried layer 6 are provided, and a shallow P diffusion layer corresponding to the conventional P diffusion layer 4 is further provided. The deep P diffusion layer 8 is connected. The P diffusion layer 9 connecting the P diffusion layer 4 and the P type substrate layer 1 is also formed at the same time as the P burying layer 6 and the P diffusion layer 8. In FIG. 2, the P diffusion layer 9 has a structure integrated with the P isolation diffusion layer 3. The P diffusion layers 4, 8 and 9 and the P burying layer 6 and the N thus formed are formed.
Light incident from the surface is photoelectrically converted at the PN junction surface formed with the epitaxial layer 2.
複数個の深いＰ拡散層８とＰ埋込層、９…Ｐ拡散層がＮ
エピタキシャル層２と形成するPN接合面が縦方向に広が
るために、表面から入射した光に対し、長い距離で光電
効果が生じ、光電変換の効率が上がる。A plurality of deep P diffusion layers 8 and P buried layers, 9 ... P diffusion layers are N
Since the PN junction surface formed with the epitaxial layer 2 spreads in the vertical direction, a photoelectric effect is generated for light incident from the surface at a long distance, and the efficiency of photoelectric conversion is increased.
第３図は本考案の他の実施例の構造を示す。FIG. 3 shows the structure of another embodiment of the present invention.
各符号は第１図の同一符号を示す部分に相当する部分を
示す。Each reference numeral indicates a portion corresponding to the same reference numeral in FIG.
Ｐ埋込層６、Ｐ拡散層８を帯状にしたものである。The P-embedded layer 6 and the P-diffused layer 8 are formed in a strip shape.
以上説明したとおり、本考案によると、表面から入射し
た光に対し、長い距離で光電効果が生じ、光電変換の効
率が上るという効果がある。As described above, according to the present invention, there is an effect that the photoelectric effect is generated for light incident from the surface at a long distance, and the efficiency of photoelectric conversion is increased.
第１図は本考案の一実施例の構造を示す断面図、第２図
は第１図の実施例の各領域のパターンを示す平面図、第
３図は本考案の他の実施例の構造を示す説明図、第４図
は従来の半導体受光素子の構造の一例を示す断面図であ
る。 １…Ｐ型基板層、２…Ｎエピタキシャル層、３…Ｐアイ
ソレーション拡散層、４…Ｐ拡散層、５…N+拡散層、６
…Ｐ埋込層、７…N+埋込層、８…Ｐ拡散層 なお図中同一符号は同一または相当する部分を示す。1 is a sectional view showing the structure of an embodiment of the present invention, FIG. 2 is a plan view showing the pattern of each region of the embodiment of FIG. 1, and FIG. 3 is a structure of another embodiment of the present invention. FIG. 4 is a sectional view showing an example of the structure of a conventional semiconductor light receiving element. 1 ... P type substrate layer, 2 ... N epitaxial layer, 3 ... P isolation diffusion layer, 4 ... P diffusion layer, 5 ... N + diffusion layer, 6
... P buried layer, 7 ... N + buried layer, 8 ... P diffusion layer In the drawings, the same reference numerals indicate the same or corresponding portions.
Claims (1)
ソレーション拡散層で分離し、該分離されたＮエピタキ
シャル層内にＰ型領域を形成してなる半導体受光素子に
おいて、 前記Ｐ型領域が、前記Ｐ型基板から、前記エピタキシャ
ル層内に延出する複数のＰ埋込層と、前記エピタキシャ
ル層表面から、前記埋込層の間の前記エピタキシャル層
内に延出する第１のＰ拡散層と、前記エピタキシャル層
表面で、複数の前記Ｐ拡散層を接続する第２のＰ拡散層
と、該第２の拡散層と前記Ｐ型基板を接続する第３のＰ
拡散層とを備えたことを特徴とする半導体受光素子。1. A semiconductor light-receiving element in which an N epitaxial layer on a P type substrate is separated by a P isolation diffusion layer, and a P type region is formed in the separated N epitaxial layer, wherein the P type region is , A plurality of P buried layers extending from the P type substrate into the epitaxial layer, and a first P diffusion layer extending from the surface of the epitaxial layer into the epitaxial layer between the buried layers. A second P diffusion layer connecting a plurality of the P diffusion layers on the surface of the epitaxial layer; and a third P diffusion layer connecting the second diffusion layer and the P type substrate.
A semiconductor light-receiving element comprising a diffusion layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988119352U JPH0741168Y2 (en) | 1988-09-13 | 1988-09-13 | Semiconductor light receiving element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988119352U JPH0741168Y2 (en) | 1988-09-13 | 1988-09-13 | Semiconductor light receiving element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0241459U JPH0241459U (en) | 1990-03-22 |
| JPH0741168Y2 true JPH0741168Y2 (en) | 1995-09-20 |
Family
ID=31364508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988119352U Expired - Lifetime JPH0741168Y2 (en) | 1988-09-13 | 1988-09-13 | Semiconductor light receiving element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0741168Y2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5898989A (en) * | 1981-12-09 | 1983-06-13 | Nec Corp | Photodiode |
| JPS612314A (en) * | 1984-06-15 | 1986-01-08 | 松下電器産業株式会社 | Wound-type metallized film condenser |
-
1988
- 1988-09-13 JP JP1988119352U patent/JPH0741168Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0241459U (en) | 1990-03-22 |
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