JPS6212962U - - Google Patents
Info
- Publication number
- JPS6212962U JPS6212962U JP10304585U JP10304585U JPS6212962U JP S6212962 U JPS6212962 U JP S6212962U JP 10304585 U JP10304585 U JP 10304585U JP 10304585 U JP10304585 U JP 10304585U JP S6212962 U JPS6212962 U JP S6212962U
- Authority
- JP
- Japan
- Prior art keywords
- type
- photodiode array
- light receiving
- semiconductor
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
第１図Ａ，Ｂは、それぞれこの考案の実施例部
分平面図および部分縦断面図、第２図は空乏層領
域を示す説明図、第３図は他実施例の部分平面図
、第４図はさらに他実施例の部分縦断面図、第５
図Ａ，Ｂは、それぞれ従来例の部分平面図および
部分縦断面図である。
１……ｎ型半導体、２……ｐ型半導体、３……
ｐｎ接合体、４……フオトダイオード、５……受
光部。
1A and 1B are a partial plan view and a partial vertical cross-sectional view of an embodiment of this invention, respectively, FIG. 2 is an explanatory diagram showing a depletion layer region, FIG. 3 is a partial plan view of another embodiment, and FIG. 4 5 is a partial longitudinal sectional view of another embodiment.
Figures A and B are a partial plan view and a partial longitudinal sectional view of a conventional example, respectively. 1... n-type semiconductor, 2... p-type semiconductor, 3...
pn junction, 4... photodiode, 5... light receiving section.
Claims (1)
半導体とを接合して形成させるｐｎ接合体からな
るフオトダイオードを複数個配列してなるフオト
ダイオードアレイにおいて、それぞれのフオトダ
イオードが、分離された複数のｐｎ接合体で構成
され、かつ複数の略等面積に分離された受光部を
具備することを特徴とするフオトダイオードアレ
イ。 ２ 受光部が２つである実用新案登録請求の範囲
第１項記載のフオトダイオードアレイ。[Scope of claims for utility model registration] 1. N-type (or p-type) semiconductor and p-type (or n-type)
In a photodiode array formed by arranging a plurality of photodiodes each composed of a pn junction formed by bonding with a semiconductor, each photodiode is composed of a plurality of separated pn junctions, and a plurality of approximately A photodiode array characterized by having light receiving sections separated by area. 2. The photodiode array according to claim 1 of the utility model registration claim, which has two light receiving sections.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10304585U JPS6212962U (en) | 1985-07-05 | 1985-07-05 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10304585U JPS6212962U (en) | 1985-07-05 | 1985-07-05 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6212962U true JPS6212962U (en) | 1987-01-26 |
Family
ID=30975238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10304585U Pending JPS6212962U (en) | 1985-07-05 | 1985-07-05 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6212962U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396720A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Solid image pickup element |
-
1985
- 1985-07-05 JP JP10304585U patent/JPS6212962U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5396720A (en) * | 1977-02-04 | 1978-08-24 | Hitachi Ltd | Solid image pickup element |