JPH0231153U - - Google Patents

Info

Publication number
JPH0231153U
JPH0231153U JP10950588U JP10950588U JPH0231153U JP H0231153 U JPH0231153 U JP H0231153U JP 10950588 U JP10950588 U JP 10950588U JP 10950588 U JP10950588 U JP 10950588U JP H0231153 U JPH0231153 U JP H0231153U
Authority
JP
Japan
Prior art keywords
light
receiving element
insulating layer
substrate
junctions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10950588U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP10950588U priority Critical patent/JPH0231153U/ja
Publication of JPH0231153U publication Critical patent/JPH0231153U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本考案になる受光素子の一実施例を示
す図、第２図は従来の受光素子を示す図である。 １０…ｎ型のＳｉ層（基板）、１１…ｐ＋型の
受光部、１２ａ，１２ｂ…絶縁層、１３ａ…遮光
部、１３ｂ…遮断部、１４，１５…電極。 FIG. 1 is a diagram showing an embodiment of a light receiving element according to the present invention, and FIG. 2 is a diagram showing a conventional light receiving element. DESCRIPTION OF SYMBOLS 10...n type Si layer (substrate), 11...p + type light receiving part, 12a, 12b...insulating layer, 13a...light shielding part, 13b...blocking part, 14, 15...electrode.

Claims (1)

【実用新案登録請求の範囲】 基板上にｐｎ接合からなる独立したフオトダイ
オード部がアレイ状またはマトリツクス状に隣接
された受光素子であつて、 前記隣接されたフオトダイオード間に絶縁層を
立設すると共に、この絶縁層内に遮光部を設けた
ことを特徴とする受光素子。[Claims for Utility Model Registration] A light-receiving element in which independent photodiode sections made of pn junctions are arranged adjacent to each other in an array or matrix on a substrate, and an insulating layer is provided between the adjacent photodiodes. A light-receiving element characterized in that a light-shielding portion is provided within the insulating layer.
JP10950588U 1988-08-20 1988-08-20 Pending JPH0231153U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10950588U JPH0231153U (en) 1988-08-20 1988-08-20

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10950588U JPH0231153U (en) 1988-08-20 1988-08-20

Publications (1)

Publication Number Publication Date
JPH0231153U true JPH0231153U (en) 1990-02-27

Family

ID=31345809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10950588U Pending JPH0231153U (en) 1988-08-20 1988-08-20

Country Status (1)

Country Link
JP (1) JPH0231153U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369273A (en) * 1991-06-18 1992-12-22 Fujitsu Ltd Infrared ray sensor
JP2014045198A (en) * 2006-04-25 2014-03-13 Koninklijke Philips Nv METHOD OF MANUFACTURING AVALANCHE PHOTODIODE BY Bi-CMOS PROCESS
WO2014109158A1 (en) * 2013-01-11 2014-07-17 株式会社ブイ・テクノロジー Optical interconnection device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233851A (en) * 1984-04-17 1985-11-20 Olympus Optical Co Ltd Solid-state image sensor
JPS61139061A (en) * 1984-12-11 1986-06-26 Hamamatsu Photonics Kk Semiconductor photodetector
JPS63248159A (en) * 1987-04-03 1988-10-14 Seiko Instr & Electronics Ltd Semiconductor photodetector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233851A (en) * 1984-04-17 1985-11-20 Olympus Optical Co Ltd Solid-state image sensor
JPS61139061A (en) * 1984-12-11 1986-06-26 Hamamatsu Photonics Kk Semiconductor photodetector
JPS63248159A (en) * 1987-04-03 1988-10-14 Seiko Instr & Electronics Ltd Semiconductor photodetector

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369273A (en) * 1991-06-18 1992-12-22 Fujitsu Ltd Infrared ray sensor
JP2014045198A (en) * 2006-04-25 2014-03-13 Koninklijke Philips Nv METHOD OF MANUFACTURING AVALANCHE PHOTODIODE BY Bi-CMOS PROCESS
WO2014109158A1 (en) * 2013-01-11 2014-07-17 株式会社ブイ・テクノロジー Optical interconnection device
CN104919731A (en) * 2013-01-11 2015-09-16 株式会社V技术 Optical interconnection device

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