JPS6161849U - - Google Patents
Info
- Publication number
- JPS6161849U JPS6161849U JP14631484U JP14631484U JPS6161849U JP S6161849 U JPS6161849 U JP S6161849U JP 14631484 U JP14631484 U JP 14631484U JP 14631484 U JP14631484 U JP 14631484U JP S6161849 U JPS6161849 U JP S6161849U
- Authority
- JP
- Japan
- Prior art keywords
- lattice
- back surface
- ohmic electrode
- shaped ohmic
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
第１図ａ乃至ｆは本考案の一実施例を説明する
ための工程図、第２図は従来の太陽電池素子断面
図である。
1A to 1F are process diagrams for explaining an embodiment of the present invention, and FIG. 2 is a sectional view of a conventional solar cell element.
Claims (1)
、受光面と相対する基板裏面に格子状オーミツク
電極を形成し、該格子状オーミツク電極が形成さ
れていない基板裏面をシリコン酸化膜で被つてな
る光電変換素子。 In a photoelectric conversion element having a single PN junction, a lattice-shaped ohmic electrode is formed on the back surface of the substrate facing the light-receiving surface, and the back surface of the substrate on which the lattice-shaped ohmic electrode is not formed is covered with a silicon oxide film. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14631484U JPS6161849U (en) | 1984-09-26 | 1984-09-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14631484U JPS6161849U (en) | 1984-09-26 | 1984-09-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6161849U true JPS6161849U (en) | 1986-04-25 |
Family
ID=30704552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14631484U Pending JPS6161849U (en) | 1984-09-26 | 1984-09-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6161849U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235385A (en) * | 1992-02-21 | 1993-09-10 | Sharp Corp | Silicon solar cell |
-
1984
- 1984-09-26 JP JP14631484U patent/JPS6161849U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05235385A (en) * | 1992-02-21 | 1993-09-10 | Sharp Corp | Silicon solar cell |