JPS6439659U - - Google Patents

Info

Publication number
JPS6439659U
JPS6439659U JP13445787U JP13445787U JPS6439659U JP S6439659 U JPS6439659 U JP S6439659U JP 13445787 U JP13445787 U JP 13445787U JP 13445787 U JP13445787 U JP 13445787U JP S6439659 U JPS6439659 U JP S6439659U
Authority
JP
Japan
Prior art keywords
type
circuit
built
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13445787U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13445787U priority Critical patent/JPS6439659U/ja
Publication of JPS6439659U publication Critical patent/JPS6439659U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図a,bは本考案の一実施例
を示すものであつて、第1図は製造後の断面図、
第2図aおよびbは製造手順を示す断面図、第3
図は従来例を示す断面図である。 7はn形基板、8はp形層、11aはn形エピ
タキシヤル層、Aはホトダイオード、Bは回路で
ある。
FIG. 1 and FIGS. 2a and 2b show an embodiment of the present invention, and FIG. 1 is a sectional view after manufacturing;
Figures 2a and b are cross-sectional views showing the manufacturing procedure;
The figure is a sectional view showing a conventional example. 7 is an n-type substrate, 8 is a p-type layer, 11a is an n-type epitaxial layer, A is a photodiode, and B is a circuit.

Claims (1)

【実用新案登録請求の範囲】 pn接合にて形成されたホトダイオードを有す
るとともに回路を内蔵した回路内蔵型受光素子に
おいて、 n形基板と、このn形基板上に形成されたp形
層と、このp形層上に形成されたn形エピタキシ
ヤル層と、p形層とn形エピタキシヤル層間に形
成されるホトダイオードとを備えたことを特徴と
する回路内蔵型受光素子。
[Claims for Utility Model Registration] A circuit built-in light receiving element having a photodiode formed by a pn junction and a built-in circuit, comprising: an n-type substrate, a p-type layer formed on the n-type substrate, and a p-type layer formed on the n-type substrate; What is claimed is: 1. A built-in circuit type light receiving element comprising: an n-type epitaxial layer formed on a p-type layer; and a photodiode formed between the p-type layer and the n-type epitaxial layer.
JP13445787U 1987-09-02 1987-09-02 Pending JPS6439659U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13445787U JPS6439659U (en) 1987-09-02 1987-09-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13445787U JPS6439659U (en) 1987-09-02 1987-09-02

Publications (1)

Publication Number Publication Date
JPS6439659U true JPS6439659U (en) 1989-03-09

Family

ID=31393228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13445787U Pending JPS6439659U (en) 1987-09-02 1987-09-02

Country Status (1)

Country Link
JP (1) JPS6439659U (en)

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