JPS6161864U - - Google Patents

Info

Publication number
JPS6161864U
JPS6161864U JP14535884U JP14535884U JPS6161864U JP S6161864 U JPS6161864 U JP S6161864U JP 14535884 U JP14535884 U JP 14535884U JP 14535884 U JP14535884 U JP 14535884U JP S6161864 U JPS6161864 U JP S6161864U
Authority
JP
Japan
Prior art keywords
light receiving
semiconductor substrate
receiving element
laser device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14535884U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP14535884U priority Critical patent/JPS6161864U/ja
Publication of JPS6161864U publication Critical patent/JPS6161864U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案半導体レーザ装置の実施の一例
を示す断面図、第2図乃至第4図は本考案半導体
レーザ装置のその他の各別の実施例を示す断面図
、第5図は従来例を示す断面図である。 符号の説明、1……半導体基板、5……レーザ
素子、8,11……光透過性樹脂層。
FIG. 1 is a cross-sectional view showing an example of the implementation of the semiconductor laser device of the present invention, FIGS. 2 to 4 are cross-sectional views showing other embodiments of the semiconductor laser device of the present invention, and FIG. 5 is a conventional example. FIG. Explanation of symbols: 1... Semiconductor substrate, 5... Laser element, 8, 11... Light-transmitting resin layer.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 表面部にモニター用受光素子が形成された半導
体基板の上記受光素子が形成されていない部分上
にレーザ素子を接続した半導体レーザ装置であつ
て、上記半導体基板の受光素子形成部表面に光透
過性樹脂層を形成してなることを特徴とする半導
体レーザ装置。
A semiconductor laser device in which a laser element is connected to a portion of a semiconductor substrate on which a monitoring light receiving element is formed, where the light receiving element is not formed, the semiconductor substrate having a light transmitting property on the surface of the light receiving element forming part of the semiconductor substrate. A semiconductor laser device characterized by forming a resin layer.
JP14535884U 1984-09-26 1984-09-26 Pending JPS6161864U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14535884U JPS6161864U (en) 1984-09-26 1984-09-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14535884U JPS6161864U (en) 1984-09-26 1984-09-26

Publications (1)

Publication Number Publication Date
JPS6161864U true JPS6161864U (en) 1986-04-25

Family

ID=30703614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14535884U Pending JPS6161864U (en) 1984-09-26 1984-09-26

Country Status (1)

Country Link
JP (1) JPS6161864U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008027546A (en) * 2006-07-24 2008-02-07 Sony Corp Composite optical element and optical signal reader

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669882A (en) * 1979-11-09 1981-06-11 Mitsubishi Electric Corp Semiconductor luminous device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5669882A (en) * 1979-11-09 1981-06-11 Mitsubishi Electric Corp Semiconductor luminous device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008027546A (en) * 2006-07-24 2008-02-07 Sony Corp Composite optical element and optical signal reader

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