JPH0480071U - - Google Patents
Info
- Publication number
- JPH0480071U JPH0480071U JP12499790U JP12499790U JPH0480071U JP H0480071 U JPH0480071 U JP H0480071U JP 12499790 U JP12499790 U JP 12499790U JP 12499790 U JP12499790 U JP 12499790U JP H0480071 U JPH0480071 U JP H0480071U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- detection electrode
- semiconductor substrate
- diffusion
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Pressure Sensors (AREA)
Description
第１図及び第２図は本案の一実施例の平面図、
第３図はその他の実施例の略断面図、第４図及び
第５図はさらに他の実施例の平面図、第６図、第
７図及び第８図はそれぞれ従来の例の平面図であ
る。
１……Ｎ型半導体基板、２，３……位置検出用
電極、４……Ｐ型拡散層、５……Ｐ＋型拡散層、
６……チヤネルストツパー、７……Ｎ＋型拡散層
、８……裏面電極、９……ＳｉＯ２膜。
Figures 1 and 2 are plan views of an embodiment of the present invention;
FIG. 3 is a schematic sectional view of another embodiment, FIGS. 4 and 5 are plan views of still further embodiments, and FIGS. 6, 7, and 8 are plan views of conventional examples, respectively. be. 1...N-type semiconductor substrate, 2, 3...Position detection electrode, 4...P-type diffusion layer, 5...P + type diffusion layer,
6... Channel stopper, 7... N + type diffusion layer, 8... Back electrode, 9... SiO 2 film.
Claims (1)
られた信号検出用電極と、これらの電極間を接続
する前記の基板の表面に形成された複数の空間を
有する第二の導電型の拡散層とを有するポジシヨ
ンセンサ。 A signal detection electrode provided on both ends of the surface of a semiconductor substrate of a first conductivity type, and a diffusion of a second conductivity type having a plurality of spaces formed on the surface of the substrate connecting these electrodes. A position sensor having a layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990124997U JP2524708Y2 (en) | 1990-11-26 | 1990-11-26 | Position sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1990124997U JP2524708Y2 (en) | 1990-11-26 | 1990-11-26 | Position sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0480071U true JPH0480071U (en) | 1992-07-13 |
| JP2524708Y2 JP2524708Y2 (en) | 1997-02-05 |
Family
ID=31872622
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1990124997U Expired - Fee Related JP2524708Y2 (en) | 1990-11-26 | 1990-11-26 | Position sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2524708Y2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917288A (en) * | 1982-07-20 | 1984-01-28 | Hamamatsu Tv Kk | Semiconductor device for incident position detection |
| JPS59127883A (en) * | 1983-01-12 | 1984-07-23 | Matsushita Electronics Corp | Photosensitive semiconductor device |
-
1990
- 1990-11-26 JP JP1990124997U patent/JP2524708Y2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5917288A (en) * | 1982-07-20 | 1984-01-28 | Hamamatsu Tv Kk | Semiconductor device for incident position detection |
| JPS59127883A (en) * | 1983-01-12 | 1984-07-23 | Matsushita Electronics Corp | Photosensitive semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2524708Y2 (en) | 1997-02-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |