JPH0455155U - - Google Patents
Info
- Publication number
- JPH0455155U JPH0455155U JP9814890U JP9814890U JPH0455155U JP H0455155 U JPH0455155 U JP H0455155U JP 9814890 U JP9814890 U JP 9814890U JP 9814890 U JP9814890 U JP 9814890U JP H0455155 U JPH0455155 U JP H0455155U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- impurity diffusion
- diffusion layers
- semiconductor substrate
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000001514 detection method Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Pressure Sensors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本案の一実施例の平面図、第２図はそ
のＡ−Ａ′略断面図、第３図は従来の一例の平面
図、第４図は従来の他の例の平面図、第５図はそ
のＣ−Ｃ′略断面図である。
１……Ｎ型半導体基板、２，３……電極、４…
…Ｐ型不純物拡散層、５，１０……高濃度のＰ型
不純物拡散層、６……チヤネルストツパー、７…
…Ｎ＋型不純物拡散層、８……裏面電極、９……
ＳｉＯ２膜、１１……Ａｌ配線。
FIG. 1 is a plan view of an embodiment of the present invention, FIG. 2 is a schematic sectional view taken along line A-A', FIG. 3 is a plan view of a conventional example, and FIG. 4 is a plan view of another conventional example. FIG. 5 is a schematic sectional view taken along the line CC'. 1... N-type semiconductor substrate, 2, 3... electrode, 4...
...P-type impurity diffusion layer, 5, 10...High concentration P-type impurity diffusion layer, 6...Channel stopper, 7...
...N + type impurity diffusion layer, 8... Back electrode, 9...
SiO 2 film, 11...Al wiring.
Claims (1)
、複数の短冊状の第二の導電型の不純物拡散層と
、この第二の導電型の不純物拡散層群を挾む信号
検出用電極と、これらを直列に接続する金属配線
とを有するフオトダイオード。 A plurality of rectangular impurity diffusion layers of a second conductivity type formed on the surface of a semiconductor substrate of the first conductivity type, and a signal detection electrode sandwiching the group of impurity diffusion layers of the second conductivity type. , and metal wiring connecting these in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9814890U JPH0455155U (en) | 1990-09-18 | 1990-09-18 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9814890U JPH0455155U (en) | 1990-09-18 | 1990-09-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0455155U true JPH0455155U (en) | 1992-05-12 |
Family
ID=31839094
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9814890U Pending JPH0455155U (en) | 1990-09-18 | 1990-09-18 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0455155U (en) |
-
1990
- 1990-09-18 JP JP9814890U patent/JPH0455155U/ja active Pending