JPH01113343U - - Google Patents
Info
- Publication number
- JPH01113343U JPH01113343U JP866088U JP866088U JPH01113343U JP H01113343 U JPH01113343 U JP H01113343U JP 866088 U JP866088 U JP 866088U JP 866088 U JP866088 U JP 866088U JP H01113343 U JPH01113343 U JP H01113343U
- Authority
- JP
- Japan
- Prior art keywords
- type
- diffusion region
- wiring
- regions
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims 2
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
第１図は本考案の一実施例の平面図、第２図は
第１図のＡ―Ａ′線断面図、第３図は従来例の断
面図である。
１……Ｐ型第１拡散領域、２……Ｐ型第２拡散
領域、３，６……配線、４，５……熱酸化膜、７
……チヤンネルストツパ、８……Ｎ型エピタキシ
ヤル層。
FIG. 1 is a plan view of one embodiment of the present invention, FIG. 2 is a sectional view taken along the line AA' in FIG. 1, and FIG. 3 is a sectional view of a conventional example. 1... P-type first diffusion region, 2... P-type second diffusion region, 3, 6... Wiring, 4, 5... Thermal oxide film, 7
...Channel stopper, 8...N type epitaxial layer.
Claims (1)
Ｐ型第１拡散領域とＰ型第２拡散領域を有し、こ
れら第１および第２拡散領域をそれぞれ別個の外
部端子に接続する第１および第２配線を有する半
導体装置において、前記第１および第２配線の内
のどちらか一方の配線が、他方の配線に接続され
ているＰ型拡散領域上を通過しておき、通過する
配線とそのＰ型拡散領域の間の酸化膜が他の領域
上の酸化膜より厚くされていることを特徴とする
半導体装置。 a P-type first diffusion region and a P-type second diffusion region disposed in close proximity in an N-type epitaxial layer; first and second diffusion regions respectively connecting the first and second diffusion regions to separate external terminals; In a semiconductor device having two wirings, one of the first and second wirings passes over a P-type diffusion region connected to the other wiring, and the wiring passing through and its P type diffusion region are connected to the other wiring. A semiconductor device characterized in that an oxide film between type diffusion regions is thicker than an oxide film on other regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP866088U JPH062275Y2 (en) | 1988-01-25 | 1988-01-25 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP866088U JPH062275Y2 (en) | 1988-01-25 | 1988-01-25 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01113343U true JPH01113343U (en) | 1989-07-31 |
| JPH062275Y2 JPH062275Y2 (en) | 1994-01-19 |
Family
ID=31214735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP866088U Expired - Lifetime JPH062275Y2 (en) | 1988-01-25 | 1988-01-25 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062275Y2 (en) |
-
1988
- 1988-01-25 JP JP866088U patent/JPH062275Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH062275Y2 (en) | 1994-01-19 |
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